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이 학술지의 논문 검색
Jagadish, C.; Clark, A.; Egan, R. J. Electrochemical Society 1996 p.19-26
In Situ Growth Rate Measurements by Normal-Incidence Reflectance During MOVPE Growth
Hou, H. Q.; Breiland, W. G.; Hammons, B. E.; Chui, H. C. Electrochemical Society 1996 p.27-35
Novel Heterostructures Produced Using In Situ Molecular-Beam Epitaxy
Hong, M.; Passlack, M.; Noh, D. Y.; Kwo, J. Electrochemical Society 1996 p.36-48
Use of Nitrogen As The Ambient in The LP-MOVPE of III/V's
Hardtdegen, H. Electrochemical Society 1996 p.49-59
Grow, J. M. Electrochemical Society 1996 p.60-72
Carbon Doping And Delta-Doping in GaAs, AlAs and AlGaAs
Davidson, B. R.; Hart, L.; Newman, R. C.; Button, C. C. Electrochemical Society 1996 p.73-84
Sensor-Based MBE for Strained AlAs/InGaAs/InAs Multiple-RTD Growth
Kao, Y. C.; Celii, F. G.; Moise, T. S.; Seabaugh, A. C. Electrochemical Society 1996 p.85-96
Characterization of Low-Temperature-Grown Molecular-Beam Epitaxy GaAs
Look, D. C. Electrochemical Society 1996 p.97-102
Chloride Vapor Phase Epitaxy for Photodetector Applications
Buckley, D. N. Electrochemical Society 1996 p.103-114