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이 학술지의 논문 검색
Shallow implanted layers in advanced silicon devices
Shannon, J.M. North Holland Pub. Co 1981 p.545-552
The electrical characteristics of ion implanted compound semiconductors
Donnelly, J.P. North Holland Pub. Co 1981 p.553-571
Electrical and physical analysis of indium implanted (111) silicon
Elliman, R.G.; Harrison, H.B.; Beanland, D.G. North Holland Pub. Co 1981 p.581-586
High-dose Ge implantation into 〈100〉 Si
Mezey, G.; Matteson, S.M.; Gyulai, J. North Holland Pub. Co 1981 p.587-590
Ellipsometric and channelling studies on ion-implanted silicon
Lohner, T.; Mezey, G.; Kótai, E.; Pászti, F.; Királyhidi, L.; Vályi, G.; Gyulai, J. North Holland Pub. Co 1981 p.591-594
Reflectance of silicon surfaces after high dose rate molecular ion implantation
Lampert, M.O.; Hage-Ali, M.; Muller, J.C.; Toulemonde, M.; Siffert, P. North Holland Pub. Co 1981 p.595-600
Raicu, B. North Holland Pub. Co 1981 p.601-602
Electronic transport in ion-bombarded amorphous silicon
Pfeilsticker, R.; Kalbitzer, S.; Müller, C. North Holland Pub. Co 1981 p.603-608
Comparative studies of Mg implants in GaAs in different annealing environments
Yeo, Y.K.; Park, Y.S.; Byung Doo Choe North Holland Pub. Co 1981 p.609-616