Sol - Gel 법으로 형성한 Ta2O5 게이트 ISFET 의 pH 드리프트 특성 = pH - drift characteristics of Sol - Gel - Deposited Ta2O5 - Gate ISFET

다국어 초록 (Multilingual Abstract)

The diffusion of hydrogen ions into a sensing membrane causes the output voltage of pH-ISFEI to van- with time, which might be considered to be drift in this sensor. We tried to deposit ultra-thin film for minimizing the drift that has been considered to be main obstacle for putting pH-ISFET to practical use. In this paper, tantalum pentoxide, known as a good pH sensing membrane, was formed to about 70Å thick by sol-gel method on Si₂N₄/SiO₂-gate of pH-ISFET. The fabricated Ta₂O_5-gate pH-ISFET showed good sensitivity(about 59mV/ pH) and good lineality in the range of pH 3-11, and had relatively small average pH drift of about 0.06 pH/day.