낮은 접촉저항을 갖는 Ni/Si/Ni n형 4H-SiC의 오옴성 접합 = Low Resistivity Ohmic Ni/Si/Ni Contacts to N-Type 4H-SiC

목차 (Table of Contents)

• Abstract
• 1. 서론
• 2. 실험
• 3. 결과 및 고찰
• 4. 결론
• 감사의 글
• 참고문헌
• 저자소개

참고문헌 (Reference)

1 금병훈, "열처리효과에 따르는 Ni/SiC 계면의 전기적 특성" 493-9 496, 1999.

2 A.K. Chaddha, "Thermally stable low specific resistance TiC ohmic contacts to n-type 6Hα-SiC" 66 (66): 6760-762, 1995

3 N. Lundberg, "Thermally stable low ohmic contacts to p-type 6H-SiC using cobalt silicides" 39 (39): 1559-1565, 1996.

4 U. Schmid, "Temperature behavior of specific contact resistance and resistivity on nitrogen implanted 6H-SiC with titanium silicide ohmic contacts" 85 (85): 2681-2686, 1999.

5 N. A. Papamicolaou, "Si/Pt ohmic contacts to p-type 4H-SiC" 73 (73): 2009-2011, 1998.

6 T. Nakamura, "Schottky barrier height of a new ohmic NiSi2 to n-type 6H-SiC" 46 : 2063-2067, 2002.

7 M. G. Rastegaeva, "Nickel-based metallization in processes of the 6H- SiC device fabrication" 142 : 1996.

8 H. H. Berger, "Models for contacts to planar devices" 15 : 145-158, 1972.

9 T. N. Oper, "High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC" 27 (27): 324-329, 1998.

10 R. Konishi, "Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H- SiC" 98 : 286-293, 2003.