규소 결정 표면의 구조 결함의 형성에 미치는 기계적 손상의 영향 = The influence of mechanical damage on the formation of the structural defects on the silicon surface during oxidation

국문 초록 (Abstract)

규소 표면의 기계적 손상은 산화 공정 중에 규소 표면에 여러 가지 형태의 결함들을 발생 시킨다. 규소 표면에 손상을 주는 마모 입자가 커짐에 따라 OISF보다는 etch pit의 형상이 동굴형인 선 결함(line defects)들이 많이 발생된다. 이들 결함들은 실리콘 결정을 성장시키는 단계에서 형성되는 결함들과는 상호 관련이 없다. 방향성 응고법으로 성장된 규소 결정속에 존재하는 결함들은 주로 twin과 stacking fault들이며 응고과정에서 발생이 예상되는 응력에 의한 전위는 거의 발견되지 않았다. 따라서 Czochralski 법으로 성장된 단 결정 규소뿐 아니라 방향성 응고법으로 성장된 다 결정 규소 기판도 표면의 결함들을 이용하여 extrinsic gettering을 통한 규소 결정 내부의 불순물 제거의 가능성이 높다.

다국어 초록 (Multilingual Abstract)

During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.

참고문헌 (Reference)

1 F. Secco d'Aragona, "planes in silicon" 948-, 1972

2 J.W. Mayer, "for integrated circuits in Si and GaAs" Macmillan Publishing Company 174-, 1990

3 M.L. Joshi,, "Stacking faults in steam-oxidized silicon" acta metall. 14 : 1157-, 1966

4 K.V. Ravi, "Oxidation-induced stacking faults in silicon. I. Nucleation phenomenon" j. appl. phys. 45 : 263-, 1974

5 D. Hull, "Introduction to dislocation" Pergamon Press 172-, 1984

6 H.S. Oh, "In Defects in Silicon" 100-1, 1999

7 H.J. Queisser, "Growth of lattice defects in silicon during oxidation" j. appl. phys. 35 : 3066-, 1964

8 I. Perichaud,, "Gettering of impurities in solar silicon" solar energy materials & solar cells. 72 : 345-, 2002

9 C.-Y. Choi, "Characterization of mechanical damage on structural and electrical properties of silicon wafers" 2011-, 1999

10 S.M. Hu,, "Anomalous temperature effect of oxidation stacking faults in silicon" appl. phys. lett. 27 : 165-, 1975

11 M.W. Jenkins,, "A new preferential etch for defects in silicon crystals" j. electrochem. soc. 124 : 757-, 1977