1 P. Friedrichs, "Unipolar SiC Devices - Latest Achievements on the Way to A New Generation of High Voltage Power Semiconductors" 1 : 1-5, 2006
2 M. Gurfinkel, "Ultra-fast Characterization of Transient Gate Oxide Trapping in SiC MOSFETs" 462-466, 2007
3 W. Saito, "Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-voltage GaN-HEMTs with Optimized Field-plate Structure" 54 (54): 1825-1830, 2007
4 P. Ning, "SiC Wirebond Multichip Phase-leg Module Packaging Design and Testing for Harsh Environment" 25 (25): 16-23, 2010
5 T. Sarkar, "Photonic Compensation of Temperature-induced Drift of SiC-DMOSFET Switching Dynamics" 25 (25): 2704-2709, 2010
6 A. Fayyaz, "Performance and Robustness Testing of SiC Power Devices" 1-5, 2012
7 X. -B. Chen, "Optimization of the Specific On-resistance of The Coolmostm" 48 (48): 344-348, 2001
8 B. Wrzecionko, "Novel Ac-coupled Gate Driver for Ultrafast Switching of Normally Off SiC JFETs" 27 (27): 3452-3463, 2012
9 K. Sheng, "Maximum Junction Temperatures of SiC Power Devices" 56 (56): 337-342, 2009
10 F. Guedon, "Gate Driver for SiC JESTs with Protection Against Normally-on Behaviour Induced fault" 47 (47): 375-377, 2011
1 P. Friedrichs, "Unipolar SiC Devices - Latest Achievements on the Way to A New Generation of High Voltage Power Semiconductors" 1 : 1-5, 2006
2 M. Gurfinkel, "Ultra-fast Characterization of Transient Gate Oxide Trapping in SiC MOSFETs" 462-466, 2007
3 W. Saito, "Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-voltage GaN-HEMTs with Optimized Field-plate Structure" 54 (54): 1825-1830, 2007
4 P. Ning, "SiC Wirebond Multichip Phase-leg Module Packaging Design and Testing for Harsh Environment" 25 (25): 16-23, 2010
5 T. Sarkar, "Photonic Compensation of Temperature-induced Drift of SiC-DMOSFET Switching Dynamics" 25 (25): 2704-2709, 2010
6 A. Fayyaz, "Performance and Robustness Testing of SiC Power Devices" 1-5, 2012
7 X. -B. Chen, "Optimization of the Specific On-resistance of The Coolmostm" 48 (48): 344-348, 2001
8 B. Wrzecionko, "Novel Ac-coupled Gate Driver for Ultrafast Switching of Normally Off SiC JFETs" 27 (27): 3452-3463, 2012
9 K. Sheng, "Maximum Junction Temperatures of SiC Power Devices" 56 (56): 337-342, 2009
10 F. Guedon, "Gate Driver for SiC JESTs with Protection Against Normally-on Behaviour Induced fault" 47 (47): 375-377, 2011
11 B. Lu, "Extraction of Dynamic On-resistance in GaN Transistors: Under Soft- and Hard-switching Conditions" 1-4, 2011
12 R. Wood, "Evaluation of A 1200-v, 800-a All-sic Dual Module" 26 (26): 2504-2511, 2011
13 H. Zhang, "Efficiency of SiC JFETbased Inverters" 2056-2059, 2009
14 K. Wada, "Design and Implementation of A Non-destructive Test Circuit for SiC-MOSFETs" 1 : 10-15, 2012
15 F. Guedon, "Boost Converter with Sic JFETs : Comparison with Coolmos and Tests at Elevated Case Temperature" 28 (28): 1938-1945, 2013
16 R. Green, "Application of Reliability Test Standards to SiC Power MOSFETs" 1-9, 2011
17 M. S. Mazzola, "Application of A Normally off Silicon Carbide Power JFET in A Photovoltaic Inverter" 649-652, 2009
18 P. Ranstad, "An Experimental Evaluation of SiC Switches in Soft Switching Converters" (99) : 1-1, 2013
19 J. Joh, "A Simple Current Collapse Measurement Technique for GaN High-electron Mobility Transistors" 29 (29): 665-667, 2008
20 R. Lai, "A Shoot-through Protection Scheme for Converters Built with SiC JFETs" 46 (46): 2495-2500, 2010
21 R. Gelagaev, "A Novel Voltage Clamp Circuit for the Measurement of Transistor Dynamic On-resistance" 111-116, 2012