A ZnS : SmF₃, ZnS : T_(b)F₃ do thin film electroluminescence devious has been fabricated by electron beam evaporation method. After the evaporation, the brat treatment has been made at 450°C for 1 hour in high vacuum. The brightness-voltage chara...
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https://www.riss.kr/link?id=A40129542
1989
Korean
539
학술저널
175-183(9쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
A ZnS : SmF₃, ZnS : T_(b)F₃ do thin film electroluminescence devious has been fabricated by electron beam evaporation method. After the evaporation, the brat treatment has been made at 450°C for 1 hour in high vacuum. The brightness-voltage chara...
A ZnS : SmF₃, ZnS : T_(b)F₃ do thin film electroluminescence devious has been fabricated by electron beam evaporation method. After the evaporation, the brat treatment has been made at 450°C for 1 hour in high vacuum. The brightness-voltage characteristic for do operation has been measured.
This electroluminescence devices shows red, green emission with maximum intensity at wavelength 710㎚, 580㎚.
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