$Pb_5Ge_3O_11$에 의한 반도성 $BaTiO_3$ 세라믹스의 저온소결성 = Low-Temperature Sinterbility of Semiconducting $BaTiO_3$ Ceramics with $Pb_5Ge_3O_11$ Additives

다국어 초록 (Multilingual Abstract)

The effects of Pb5Ge3O11 on the sinterbility and lattice variation of the semiconducting 0.15 mol% Y2O3 doped BaTiO3 have been investigated as functions of additive contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 110$0^{\circ}C$ to 130$0^{\circ}C$). As the amount of Pb5Ge3O11 increases, the sinterbility of BaTiO3 increases abruptly at around 115$0^{\circ}C$. During the sintering, the most of Pb+2 ions in additives penetrate into BaTiO3 lattices and Ge+4 ions present at grain boundaries. Therefore the c lattice of the BaTiO3 increases largely and then the tetragonality increases due to the diffusion of the Pb+2 ions.