<P><B>Transfer characteristics of ZnO thin‐film transistors</B> (TFTs) based on ZnO doped with various alkali metals. A new doping method is demonstrated by employing alkali metals to achieve high‐performance and solution...
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https://www.riss.kr/link?id=A107751738
2012
-
SCOPUS,SCIE
학술저널
834-838(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Transfer characteristics of ZnO thin‐film transistors</B> (TFTs) based on ZnO doped with various alkali metals. A new doping method is demonstrated by employing alkali metals to achieve high‐performance and solution...
<P><B>Transfer characteristics of ZnO thin‐film transistors</B> (TFTs) based on ZnO doped with various alkali metals. A new doping method is demonstrated by employing alkali metals to achieve high‐performance and solution‐processed ZnO TFTs with a low processing temperature (∼300 °C), which is applicable to flexible plastic substrates.</P>