<P>We investigated the atomic structure of inclined threading edge dislocation (TED) typically observed in GaN grown on Si(111) through (scanning) transmission electron microscopy. Atomic observations verified that the inclined TED consisted of ...
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https://www.riss.kr/link?id=A107465246
2018
-
SCI,SCIE,SCOPUS
학술저널
4866-4870(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We investigated the atomic structure of inclined threading edge dislocation (TED) typically observed in GaN grown on Si(111) through (scanning) transmission electron microscopy. Atomic observations verified that the inclined TED consisted of ...
<P>We investigated the atomic structure of inclined threading edge dislocation (TED) typically observed in GaN grown on Si(111) through (scanning) transmission electron microscopy. Atomic observations verified that the inclined TED consisted of two partial dislocations. These results imply that the inclined TED possesses a Ga-Ga atomic configuration that is energetically unfavorable. However, the introduction of such structures is considered unavoidable because the TEDs should climb regularly to mediate the applied stress or the increasing surface due to the buffer layer. This Ga-Ga configuration is highly likely to form metallic bonds and appears to be the primary reason for the inferior efficacy of a GaN light-emitting diode grown on Si(111).</P>
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One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure