<P>Electrostatic discharge (ESD) robustness of a promising nanoscaled device, the gate-all-around nanowire field-effect transistor (NW FET), was characterized for the first time using the transmission-line pulsing technique. The effects of gate ...
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https://www.riss.kr/link?id=A107724886
2010
-
SCI,SCIE,SCOPUS
학술저널
352-354(3쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Electrostatic discharge (ESD) robustness of a promising nanoscaled device, the gate-all-around nanowire field-effect transistor (NW FET), was characterized for the first time using the transmission-line pulsing technique. The effects of gate ...
<P>Electrostatic discharge (ESD) robustness of a promising nanoscaled device, the gate-all-around nanowire field-effect transistor (NW FET), was characterized for the first time using the transmission-line pulsing technique. The effects of gate length, nanowire dimension, and nanowire count on the failure current, leakage current, trigger voltage, and on-resistance were investigated. ESD performances of the gate-all-around NW FET and other nanostructure devices, such as the poly-Si nanowire thin-film transistor and FinFET were also compared and discussed.</P>