A GaN/AlGaN two-dimensional electron system (2DES) has been prepared
on a Si substrate, and the electron heating effect in the 2DES has
been studied experimentally by using the resistance of the 2DES as a
self-thermometer. The relation $T_e$ $\sim$ $I...
A GaN/AlGaN two-dimensional electron system (2DES) has been prepared
on a Si substrate, and the electron heating effect in the 2DES has
been studied experimentally by using the resistance of the 2DES as a
self-thermometer. The relation $T_e$ $\sim$ $I^{1.42}$ was obtained,
which is in contrast to $T_e$ $\sim$ $I^{0.5}$ in the spin-split
resistivity peaks in a GaAs/AlGaAs 2DES. A possible reason for this
is discussed