Epitaxial ZnO films were prepared on Si (111) substrates using epitaxial 3C-SiC buffer layers. In particular, we tried different epitaxial 3C-SiC buffer layers to grow high quality ZnO films on silicon substrates by metal-organic chemical ...
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https://www.riss.kr/link?id=A104335294
Zhu Junjie ; Lee InHwan ; Ran Yao ; Zhuxi Fu
2007
-
KCI등재,SCI,SCIE,SCOPUS
학술저널
598-601(4쪽)
6
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Epitaxial ZnO films were prepared on Si (111) substrates using epitaxial 3C-SiC buffer layers. In particular, we tried different epitaxial 3C-SiC buffer layers to grow high quality ZnO films on silicon substrates by metal-organic chemical ...
Epitaxial ZnO films were prepared on Si (111) substrates using epitaxial
3C-SiC buffer layers. In particular, we tried different epitaxial
3C-SiC buffer layers to grow high quality ZnO films on silicon substrates
by metal-organic chemical vapor deposition. The relationship between
the quality of ZnO epitaxial layers and that of the SiC buffer layers
was investigated. The epitaxial ZnO films were obviously improved by
improving the SiC buffer layers. When the quality of the SiC buffer
layers was good enough, the effect became less obvious.
Study of the Characteristics of HfO2/Hf Films Prepared by Atomic Layer Deposition on Silicon
Characteristics of Light Transmission Through Nano-Apertures on Pyramidal Probes
학술지 이력
연월일 | 이력구분 | 이력상세 | 등재구분 |
---|---|---|---|
2023 | 평가예정 | 해외DB학술지평가 신청대상 (해외등재 학술지 평가) | |
2020-01-01 | 평가 | 등재학술지 유지 (해외등재 학술지 평가) | |
2011-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2009-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2007-01-01 | 평가 | SCI 등재 (등재유지) | |
2005-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2002-07-01 | 평가 | 등재학술지 선정 (등재후보2차) | |
2000-01-01 | 평가 | 등재후보학술지 선정 (신규평가) |
학술지 인용정보
기준연도 | WOS-KCI 통합IF(2년) | KCIF(2년) | KCIF(3년) |
---|---|---|---|
2016 | 0.47 | 0.15 | 0.31 |
KCIF(4년) | KCIF(5년) | 중심성지수(3년) | 즉시성지수 |
0.26 | 0.2 | 0.26 | 0.03 |