A novel piezoresistive silicon accelerometer using SOI (Silicon On Insulator) structure is described. The accelerometer has high temperature resistance realized by perfect isolation of piezoresistors. Furthermore, the accelerometer can detect three di...
A novel piezoresistive silicon accelerometer using SOI (Silicon On Insulator) structure is described. The accelerometer has high temperature resistance realized by perfect isolation of piezoresistors. Furthermore, the accelerometer can detect three dimensional acceleration vector with a new principal using simple analog operational circuits. FEM (Finite Element Modeling) analysis were carried out with a commercial package, ANSYS for design of the device structure and estimation of the device characteristics. Temperature characteristics and output characteristics of fabricated devices were measured, and compared with the simulated results. As the result of comparison, good agreement was obtained.