Inductorless Broadband Transimpedance Amplifier for 25-Gb/s NRZ and 50-Gb/s PAM-4 Operations in a 90-nm CMOS Technology

다국어 초록 (Multilingual Abstract)

In this study, an inductorless broadband transimpedance amplifier (TIA) is implemented using TSMC 90-nm complementary metal-oxide-semiconductor (CMOS) technology. A regulated cascode circuit with low input impedance is used as the input stage of the TIA. The core amplifier is a fully differential amplifier with active feedback. The output stage of the TIA is an equalizer based on a differential amplifier with a source degenerated resistor and capacitor. The TIA has a bandwidth of 24.8 GHz and good linearity. In the TIA chip testing, clear 25-Gb/s nonreturn to zero and 50-Gb/s four-level pulse amplitude modulation eye diagrams can be observed.

목차 (Table of Contents)

• Abstract
• I. INTRODUCTION
• II. CIRCUIT ARCHITECTURE AND ANALYSIS
• III. MEASURED VERIFICATION
• IV. CONCLUSION
• REFERENCES

참고문헌 (Reference)

1 Q. Cheng, "Recent advances in optical technologies for data centers : a review" 5 (5): 1354-1370, 2018

2 S. Bhoja, "PAM4 signaling for intra–data center and data center to data center connectivity (DCI)" 2017

3 H. Isono, "Latest standardization trends for client and networking optical transceivers and its future directions" 2018

4 E. Sӓckinger, "Broad Circuits for Optical Fiber Communication" Wiley 54-66, 2005

5 C. W. Seng, "A low power wideband differential transimpedance amplifier for optical receivers in 0. 18-μm CMOS" 1-4, 2013

6 A. Hiratsuka, "A low input referred noise and low crosstalk noise 25 Gb/s transimpedance amplifier with inductorless bandwidth compensation" 69-72, 2018

7 C. F. Liao, "A 40Gb/s transimpedance-AGC amplifier with 19dB DR in 90nm CMOS" 54-55, 2007

8 S. G. Kim, "A 40-GHz Mirrored-Cascode Differential Transimpedance Amplifier in 65-nm CMOS" 54 (54): 1468-1474, 2018

9 R. Costanzo, "A 10-GHz bandwidth transimpedance amplifier with input DC photocurrent compensation loop" 30 (30): 673-676, 2020

10 C. F. Campbell, "A 0. 15-μm GaAs MHEMT transimpedance amplifier IC for 40-Gb/s applications" 79-82, 2002

11 C. Knochenhauer, "40Gbit/s transimpedance amplifier with high linearity range in 0. 13 μm SiGe BiCMOS" 47 (47): 605-606, 2011

12 H. W. Hsu, "25 Gb/s NRZ and 50 Gb/s PAM-4 transimpedance amplifier with active feedback and equalization in 90 nm CMOS technology" 251-257, 2019

13 S. M. Park, "1. 25-Gb/s regulated cascode CMOS transimpedance amplifier for gigabit ethernet applications" 39 (39): 112-121, 2004