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이 학술지의 논문 검색
Automated control of III-V semiconductor composition and structure by spectroellipsometry
Quinn, W. E.; Aspnes, D. E.; Brasil, M. J. S. P.; Pudensi, M. A. A. American Institute of Physics 1992 p.759-761
Nikzad, S.; Ahn, C. C.; Atwater, H. A. American Institute of Physics 1992 p.762-765
Chen, Y. C.; Bhattacharya, P. K.; Singh, J. American Institute of Physics 1992 p.766-768
Chen, Y. C.; Bhattacharya, P. K.; Singh, J. American Institute of Physics 1992 p.769-771
Jang, J.-G.; Miller, D. L.; Fu, J.; Zhang, K. American Institute of Physics 1992 p.772-774
High-quality materials and heterostructures on (111)B GaAs
Chin, A.; Martin, P.; Das, U.; Ballingall, J. American Institute of Physics 1992 p.775-778
Migration-enhanced epitaxy of doped GaAs on (111)B and (100)GaAs substrates
Fu, J.; Zhang, K.; Miller, D. L. American Institute of Physics 1992 p.779-782
GaAs/AlGaAs quantum wells grown over epitaxial CoAl layers with molecular-beam epitaxy
Goodhue, W. D.; Le, H. Q.; Johnson, G. D.; Bales, J. W. American Institute of Physics 1992 p.783-787
Hozhabri, N.; Hyer, R. C.; Sharma, S. C.; Ma, J. Y. American Institute of Physics 1992 p.788-792
Kaviani, K.; Chen, J.; Hu, K.; Chen, L. American Institute of Physics 1992 p.793-796