Solution processed growth and photoelectrochemistry of Bi₂S₃ nanorods thin film

다국어 초록 (Multilingual Abstract)

Bismuth sulfide (Bi<SUB>2</SUB>S<SUB>3</SUB>) belongs to a family of metal chalcogenides in a class of non-toxic semiconductor materials, whose importance in photovoltaic and thermoelectric applications is well recognized. We have successfully prepared crystalline Bi<SUB>2</SUB>S<SUB>3</SUB> nanorod (NR) thin films from a solution of bismuth chloride and thioacetamide via a solution process method. A possible mechanism for the growth process of the Bi<SUB>2</SUB>S<SUB>3</SUB> NRs is proposed. Prepared Bi<SUB>2</SUB>S<SUB>3</SUB> NR films characterized via X-ray diffraction (XRD), energy dispersive analysis (EDX), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), brunauer-emmett-teller (BET) surface area, and photoelectrochemical cells are studied. The morphology of the Bi<SUB>2</SUB>S<SUB>3</SUB> NR reveals a photocurrent density of 0.20mA/cm<SUP>2</SUP> at 0V bias condition under 1 sun illumination. The charge transport properties of the Bi<SUB>2</SUB>S<SUB>3</SUB> NRs are studied via impedance spectroscopy analysis. This preparation method is economical for scale-up processes, and can also applied to the preparation of other metal sulfide semiconductors.