1 "수직형 Feed-throu호 갖는 RF-MEMS 소자의 웨이퍼 레벨 패키징" 15 (15): 889-, 2002.
2 "밀리미터파 플립 칩 실장구조에서의 누설파와 간섭효과 억제방법" 35 (35): 40-, 1998.
3 "Wideband characterization of a typical bonding wire for microwave and millimeter-wave integrated circuits" mtt-43 (mtt-43): 63-, 1995.
4 "Suppression of Leakage and Crosstalk in Typical Millimeter -wave Flip-chip Packages" 195-97, 1997.
5 "Millimeter-wave performance of interconnections using wire bonding and flip chip" San Francisco 247-, 1996.
6 "Advantages of flip chip technology in millimeter-wave packaging" 987-, 1997.
7 "A Coplanar- to-microstrip Transition for W-band Circuit Fabrication with 100-㎛-thick GaAs Wafers" 889-, 1999.
1 "수직형 Feed-throu호 갖는 RF-MEMS 소자의 웨이퍼 레벨 패키징" 15 (15): 889-, 2002.
2 "밀리미터파 플립 칩 실장구조에서의 누설파와 간섭효과 억제방법" 35 (35): 40-, 1998.
3 "Wideband characterization of a typical bonding wire for microwave and millimeter-wave integrated circuits" mtt-43 (mtt-43): 63-, 1995.
4 "Suppression of Leakage and Crosstalk in Typical Millimeter -wave Flip-chip Packages" 195-97, 1997.
5 "Millimeter-wave performance of interconnections using wire bonding and flip chip" San Francisco 247-, 1996.
6 "Advantages of flip chip technology in millimeter-wave packaging" 987-, 1997.
7 "A Coplanar- to-microstrip Transition for W-band Circuit Fabrication with 100-㎛-thick GaAs Wafers" 889-, 1999.