Fabrication of Two-dimensional MoS2 Films-based Field Effect Transistor for High Mobility Electronic Device Application

다국어 초록 (Multilingual Abstract)

The two-dimensional layered MoS2 has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. MoS2 is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-MoS2 and MoS2-MoS2 heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, MoS2 can easily be exfoliated physically or chemically. During the MoS2 field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-MoS2 gap, and leads to the problem of a rapid decline in the material’s yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic MoS2 field effect transistor (FET) was fabricated on a hydrophilic SiO2 substrate via chemical vapor deposition CVD. To solve the problem of MoS2 exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a MoS2 film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.

목차 (Table of Contents)

• Abstract
• I. Introduction
• II. Experiments
• III. Results and Discussion
• IV. Summary
• References