라디오주파수 분말 스퍼터링 방법으로 성장시킨 주석을 도핑한 산화아연 박막의 열처리 = Annealing of Sn Doped ZnO Thin Films Grown by Radio Frequency Powder Sputtering

다국어 초록 (Multilingual Abstract)

We report the post-annealing effect of Sn doped ZnO (ZnO:Sn) thin film grown on sapphire (001) sub-strate using radio-frequency powder sputtering method. During thermal annealing in a vacuum atmosphere, the ZnO:Sn thin film is transformed into a porous thin film. Based on X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analyses, a possible mechanism for the production of pores is presented. Sn atoms segregate to form clusters that act as catalysts to dissociate Zn-O bonds. The Zn and O atoms subsequently vaporize, leading to the formation of pores in the ZnO:Sn thin film. We also found that Sn clusters were oxidized to form SnO or SnO₂ phases.
(Received April 20, 2018; Revised April 27, 2018; Accepted May 4, 2018)