InGaAs quantum dot molecules during selective etching using an In droplet mask

다국어 초록 (Multilingual Abstract)

<P>We investigated the optical transition of InGaAs quantum dot molecules (QDMs) during selective etching of GaAs using In droplets to demonstrate low-density QDMs. During the selective etching, In droplets act as nanoscale masks and only QDMs underneath the droplets survive, by which process low-density QDMs are fabricated. The thickness of selective GaAs etching is systematically varied and a gradual red-shift is observed with the increased etching thickness. The continuing red-shift can be explained by the strain relaxation due to GaAs etching. This technique to achieve low-density QDMs by selective etching using droplets as nanoscale mask is a simple and flexible approach. This study can find applications in single QDM spectroscopy and other spectroscopic techniques.</P>