A Single-crystalline Mn-Zn Ferrite (110 orientation) was masklessly etched by focused Ar laser irradiation in an H$_3$PO$_4$ solution. The depth of the etched grooves increases with increasing a laser power, decreasing a scan speed, and increasing the...
A Single-crystalline Mn-Zn Ferrite (110 orientation) was masklessly etched by focused Ar laser irradiation in an H$_3$PO$_4$ solution. The depth of the etched grooves increases with increasing a laser power, decreasing a scan speed, and increasing the H$_3$PO$_4$concentration. The width of the etched grooves increases with a increasing laser power, but was relatively insensitive to the scan speed and H$_3$PO$_4$concentration. High etching rate of up to 714 ${\mu}{\textrm}{m}$/s and an aspect ratio of 6 for vertical slab structure have been obtained by the light-guiding effect of the laser bean in the H$_3$PO$_4$ solution.