폴리머 기판상에 합성된 저온 ITO 박막에 미치는 Ar + H₂ 플라즈마의 영향

다국어 초록 (Multilingual Abstract)

Indium tin oxide (ITO) films were synthesized on polymer (PES, polyethersulfone) at room temperature by pulsed DC magnetron sputtering. By the control of introducing hydrogen to argon atmosphere, the resistivity of ITO films was obtained at 5.27 × 10<SUP>?4</SUP> Ω · ㎝ without substrate heating in comparison with 2.65 × 10<SUP>?3</SUP> Ω · ㎝ under hydrogen free condition. ITO film synthesized at Ar condition was changed from amorphous to crystalline. These result from the enhancement of electron temperature in Ar + H₂ plasma, which induces the increase of ionization of target materials and argon. The dominant increase of ions such as In Ⅱ and O Ⅱ and neutral Sn Ⅰ was monitored by optical emission spectroscopy (OES). Thermal energy required for the crystalline film formation is compensated by kinetic energy transfer through ion bombardments to substrate.

목차 (Table of Contents)

• Abstract
• 1. 서론
• 2. 실험 방법
• 3. 결과 및 고찰
• 4. 결론
• 참고문헌