HVPE 방법에 의한 금속 화합물 탄소체 기판 위의 GaN 성장 = The growth of GaN on the metallic compound graphite substrate by HVPE

국문 초록 (Abstract)

GaN는 대표적인 III-V족 질화물반도체로 주로 값싸고 다루기 쉬운 사파이어 기판 위에 성장된다. 하지만 사파이어 기판은 부도체이며, GaN과의 격자부정합을 일으키고 열전도도 또한 낮은 기판으로 알려져 있다. 본 논문에서는 방열기능과 열 전기전도도가 뛰어난 금속 화합물 탄소체 기판 위에 poly GaN epilayer를 HVPE법으로 성장시켜보았다. 비정질의 금속 화합물 탄소체 기판위에 성장되는 GaN epilayer의 성장메카니즘을 관찰하였다. GaN epilayer의 성장을 위해 HCl과 $NH_3$를 흘려주었다. 성장하기 위해 source zone과 growth zone의 온도는 각각 $850^{\circ}C$와 $1090^{\circ}C$로 설정했다. 성장이 끝난 샘플은 SEM, EDS, XRD측정을 통해 분석하였다.

다국어 초록 (Multilingual Abstract)

The GaN layer was typical III-V nitride semiconductor and was grown on the sapphire substrate which cheap and convenient. However, sapphire substrate is non-conductivity, low thermal conductivity and has large lattice mismatch with the GaN layer. In this paper, the poly GaN epilayer was grown by HVPE on the metallic compound graphite substrate with good heat dissipation, high thermal and electrical conductivity. We tried to observe the growth mechanism of the GaN epilayer grown on the amorphous metallic compound graphite substrate. The HCl and $NH_3$ gas were flowed to grow the GaN epilayer. The temperature of source zone and growth zone in the HVPE system was set at $850^{\circ}C$ and $1090^{\circ}C$, respectively. The GaN epilayer grown on the metallic compound graphite substrate was observed by SEM, EDS, XRD measurement.

참고문헌 (Reference)

1 K. Kawasaki, "Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique" 89 : 261114-, 2006

2 V. Adivarahan, "Submilliwatt power III-N light emitting diodes at 285 nm" 41 : 435-, 2002

3 Y.J. Yu, "Optical investigation of InGaN/GaN quantum well structures with various barrier widths" 28 : 134-, 2001

4 T. Ueda, "Laser lift-off of very thin AlGaN film from sapphire using selective decomposition of GaN interlayer" 216 : 512-, 2003

5 H.H. Cheng, "Heat dissipation design and analysis of high power LED array using the finite element method" 52 : 905-, 2012

6 오동근, "HVPE법으로 성장시킨 GaN 단결정의 wet etching에 의한 표면 변화" 한국결정성장학회 22 (22): 261-264, 2012

7 A. Koukitu, "HVPE growth of AlxGa1 − xN ternary alloy using AlCl3 and GaCl" 305 : 335-, 2007

8 S.N. Lee, "Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate" (376-377) : 532-, 2006

9 강진기, "Fabrication and characterization of tilted R-plane sapphire wafer for nonpolar a-plane GaN" 한국결정성장학회 21 (21): 187-192, 2011

10 F. Yun, "Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy" 44 : 2225-, 2000

11 T. Nishida, "Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN" 79 : 711-, 2001

12 B. Luo, "Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions" 46 : 1345-, 2002

13 H.M. Kim, "Cathodoluminescence characterization of GaN thick films grown by using the HVPE method" 37 : 956-, 2000

14 T.G. Zhu, "AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition" 248 : 548-, 2003

15 H.H. Wu, "A study on the heat dissipation of high power multi-chip COB LEDs" 43 : 280-, 2012