<P><B>Abstract</B></P> <P>With bismuth oxide additive in zinc-air batteries anode, we have demonstrated a controlled dendrite formation at the anode surface by high current densities of 0.1 and 0.2 A/cm<SUP>2</S...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107465744
2018
-
SCOPUS,SCIE
학술저널
507-514(8쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Abstract</B></P> <P>With bismuth oxide additive in zinc-air batteries anode, we have demonstrated a controlled dendrite formation at the anode surface by high current densities of 0.1 and 0.2 A/cm<SUP>2</S...
<P><B>Abstract</B></P> <P>With bismuth oxide additive in zinc-air batteries anode, we have demonstrated a controlled dendrite formation at the anode surface by high current densities of 0.1 and 0.2 A/cm<SUP>2</SUP> during charging process. Cyclic voltammetry (CV) was carried out at a voltage range of −2.0 ∼ 0.5 V and a scan rate of 1 mV/s to examine the electrochemical performance of the electrode. Surprisingly, we have been able to reveal that zinc anode with 3 wt% bismuth oxide showed cathodic peaks after 20 cycles with no noticeable loss in performance. Structural characterization via FE-SEM images revealed that 3-dimensional spherical morphology was formed with bismuth oxide at a current density of 0.05 A/cm<SUP>2</SUP> under controlled kinetics. We have no doubt that our additive successfully mitigated the formation of dendrite at the surface of the anode. Thus, we gained sufficient insight on the critical role of bismuth oxide additive to achieving a dendrite free zinc anode with a stable cycle. Hence, this anode can be use as an excellent anode material in zinc-air secondary batteries.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Controlled dendrite formation via BiO additive at the Zn anode is demonstrated. </LI> <LI> Cycle Voltammetry showed cathodic peaks after 20 cycles with no performance losses. </LI> <LI> 3D spherical image was formed with bismuth oxide additive under controlled kinetics. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Carrier tunneling and thermal escape in asymmetric double quantum dots