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In-plane anisotropy in uniaxially-strained GaN films detected by optical diffraction technique
Adachi, S.; Toda, Y.; Ishiguro, T.; Hoshino, K.; Arakawa, Y. John Wiley & Sons, Ltd 2006 p.1361-1361
Molecular beam epitaxy for high-efficiency nitride optoelectronics
Heffernan, J.; Kauer, M.; Windle, J.; Hooper, S. E.; Bousquet, V.; Zellweger, C.; Barnes, J. M. John Wiley & Sons, Ltd 2006 p.1379-1382
Radio-frequency MBE growth of cubic GaN on BP(001)/Si(001) hetero-structure
Kikuchi, T.; Somintac, A. S.; Odawara, M.; Udagawa, T.; Ohachi, T. John Wiley & Sons, Ltd 2006 p.1383-1387
Novel buffer layer for the growth of GaN on c-sapphire
Lee, W.; Lee, S.; Goto, H.; Ko, H.; Cho, M.; Yao, T. John Wiley & Sons, Ltd 2006 p.1388-1391
Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates
Balakrishnan, K.; Fujimoto, N.; Kitano, T.; Bandoh, A.; Imura, M.; Nakano, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I. John Wiley & Sons, Ltd 2006 p.1392-1395
Two to three dimensional transitions of InGaN and the impact of GaN overgrowth
Yamaguchi, T.; Einfeldt, S.; Gangopadhyay, S.; Pretorius, A.; Rosenauer, A.; Falta, J.; Hommel, D. John Wiley & Sons, Ltd 2006 p.1396-1399
Effect of growth temperature on AlGaInN layers: a TEM analysis
Mendez, D.; Albrecht, M.; Monroy, E.; Jalabert, D.; Strunk, H. P.; Sanchez, A. M.; Garcia, R. John Wiley & Sons, Ltd 2006 p.1400-1403
Radio-frequency MBE growth of cubic GaN on 3C-SiC(001)/Si(001) template
Ohachi, T.; Kikuchi, T.; Somintac, A.; Yamaguchi, S.; Yasuda, T.; Wada, M. John Wiley & Sons, Ltd 2006 p.1404-1407
Effect of carrier gas on GaN epilayer characteristics
Cho, Y. S.; Hardtdegen, H.; Kaluza, N.; Thillosen, N.; Steins, R.; Sofer, Z.; Luth, H. John Wiley & Sons, Ltd 2006 p.1408-1411
Large bandgap bowing of InxGa1-xN films and growth of blue/green InxGa1-xN
Lee, K. J.; Oh, T. S.; Kim, T. K.; Yang, G. M.; Lim, K. Y. John Wiley & Sons, Ltd 2006 p.1412-1415