수소 및 산소 첨가에 따른 산화아연막의 전기적, 광학적, 구조적 물성 = Effects of oxygen and hydrogen additives on electrical, optical, and structural properties of ZnO films

다국어 초록 (Multilingual Abstract)

Effects of hydrogen and oxygen additives on structural, optical, and electrical properties of ZnO films were extensively examined. ZnO films were deposited using RF sputtering by varying the gas mixing ratio of H₂ and O₂. Optical transmittances at visible region, electrical resistivities, and micro-structures of ZnO films were characterized in terms of the kind and amount of additive gases. It was observed that the material properties of ZnO films required for their use in transparent thin film transistors, such as approximately 103Ω㎝ in resistivity and higher than 85% in transmittance, can be achieved by controlling the gas mixing ratio of O₂/H₂ (sccm) in the range of 2/2~2/8.