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Harvey Cleo,Vandenburg S.,Ellingboe A.R. 한국물리학회 2021 Current Applied Physics Vol.28 No.-
The design of a Very-High-Frequency (VHF) 162 MHz driven atmospheric-pressure Capacitively-Coupled-Plasma (CCP), with top and bottom electrodes operated in push-pull configuration, powered via a Power-Splitting- Transmission-Line-Driver (PSTLD), is presented. Application to the reprocessing of carbon dioxide into carbon-monoxide in this "high” VHF atmospheric plasma is presented, demonstrating some behaviour of the plasma source. rf power in the system is characterized using measured current (~ 1′ s Amps peak) and voltage (~ 10′ s Volts peak) waveforms at the electrode; Both are sinusoidal confirming a glow-discharge operational condition. Analysis of Optical Emission Spectra results find a highly non-equilibrium plasma, with high vibrational temperatures (from N2) in the range ~4000 K, while gas temperature, monitored by a thermocouple at the gas outlet, remains low ~300 K, and confirmed by analysis of the N2 rotational bands. The relative density of CO produced, as a by-product of CO2 dissociation, is measured optically using N2 as an actinometer. The CO density increases with rf power and longer gas residence times in the plasma volume. The high VHF atmospheric plasma is found to operate in pure CO2 flows (no helium) with minimal gas heating for the full range of power densities (specific energy input of 0.4–2 eV per molecule) investigated.
Monaghan, E.,Yeom, G.Y.,Ellingboe, A.R. Pergamon Press [etc.] 2015 Vacuum Vol.119 No.-
This paper presents the characterization of a very high frequency, differentially powered, capacitively coupled, multi-tile plasma source, MAMELUKE. Specifically, this work concentrates on the plasma enhanced chemical vapor deposition of nano-crystalline silicon suitable for application in thin film solar manufacturing. The use of a differentially-fed multi-tile source has several benefits, but imposes a spatial structure on the plasma. Sections of dielectric insulator between the differentially-fed tiles interrupt both the electrode structure and the local gas delivery to the plasma volume, both of which contribute to the gas phase chemistry uniformity profile. We investigate the affect of these factors on the plasma spatial structure by measuring the uniformity of deposited films. We examine films deposited using the MAMELUKE source focusing on the ability to produce uniform, high quality films over large areas, with high deposition rates. Spatially resolved measurements of film thickness and crystalline fraction are presented. These measurements are then used in combination with the known behaviors of very high frequency plasma systems established by previous research to draw conclusions regarding the behavior of plasma uniformity with changing process parameters. The measurements indicate that changes in the uniformity of film properties are primarily driven by gas phase chemistry effects. Changes in local gas phase chemistry are attributed to a combination of non uniformities in both the power and gas delivery in the MAMELUKE source.
Kim, Ki Seok,Sirse, Nishant,Kim, Ki Hyun,Ellingboe, Albert Rogers,Kim, Kyong Nam,Yeom, Geun Young IOP 2016 Journal of Physics. D, Applied Physics Vol.49 No.39
<P>To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN<SUB> <I>x</I> </SUB> is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push–pull plasma source, SiN<SUB> <I>x</I> </SUB> layers were deposited with a gas mixture of NH<SUB>3</SUB>/SiH<SUB>4</SUB> with/without N<SUB>2</SUB> and the characteristics of the plasma and the deposited SiN<SUB> <I>x</I> </SUB> film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push–pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N<SUB>2</SUB> dissociation for an N<SUB>2</SUB> plasma. When a SiN<SUB> <I>x</I> </SUB> layer was deposited with a mixture of NH<SUB>3</SUB>/SiH<SUB>4</SUB> with N<SUB>2</SUB> at a low temperature of 100 °C, a stoichiometric amorphous Si<SUB>3</SUB>N<SUB>4</SUB> layer with very low Si–H bonding could be deposited. The 300 nm thick SiN<SUB> <I>x</I> </SUB> film exhibited a low water vapor transmission rate of 1.18 × 10<SUP>−4</SUP> g (m<SUP>2</SUP> · d)<SUP>−1</SUP>, in addition to an optical transmittance of higher than 90%.</P>