http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Zhen Xiao,Chengjie Sheng,Yang Xia,Xiaojun Yu,Chu Liang,Hui Huang,Yongping Gan,Jun Zhang,Wenkui Zhang 한국공업화학회 2019 Journal of Industrial and Engineering Chemistry Vol.71 No.-
A rationally designedflexible electrothermalfilm is composed of Super-P (SP, nanoparticle),thermoplastic polyurethane (TPU) and silica. The electric heating behavior of electrothermalfilmscan be facilely adjusted by SP contents and applied voltages. TPU/SP composite with 25 wt.% SP presentsrobust structural stability, fast response feature and superior electrothermal reproducibility. Theconductive network formed by SP nanoparticles not only could quickly convert the electric energy toheat, but also is stable under stepwise periodic and long-term electric heating–cooling conditions. Finally, a smart wrist band integrated electric heater and temperature indicator is verified the highpotential in multifunctional wearable device applications.
Highly AC Voltage Fluctuation-Resistant LED Driver with Sinusoid-Like Reference
Ning Ning,Zhenxiao Tong,Dejun Yu,Shuangyi Wu,Wenbin Chen,Chunyi Feng 전력전자학회 2014 JOURNAL OF POWER ELECTRONICS Vol.14 No.2
A novel converter-free AC LED driver that is highly resistant to the fluctuation of AC voltage is proposed in this study. By removing large passive components, such as the bulky capacitor and the large-value inductor, the integration of the driver circuit is enhanced while the driving current remains stable. The proposed circuit provides LED lamps with a driving current that can follow the sinusoid waveform to obtain a very high power factor (PF) and low total harmonic distortion (THD). The LED input current produced by this driving current is insensitive to fluctuations in the AC voltage. Users will thus not feel that LED lamps are flashing during the fluctuation. Experiment results indicate that the proposed system can obtain PF of 0.999 and THD as low as 3.3% for a five-string 6 W LED load under 220 V at 50 Hz.
Microwave Dielectric Properties of High-Q Mg(SnxTi1-x)O3 Ceramics
Zhijie Gong,Zhefei Wang,Lixi Wang,Zhenxiao Fu,Wei Han,Qitu Zhang,김응수 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.3
A series of Sn-doped Mg(SnxTi1-x)O3 ceramics were prepared using the conventional solid-state route. The influence of Sn4+ substitution for Ti4+ on the microstructure and microwave dielectric properties of Mg(SnxTi1-x)O3ceramics was systematically investigated. Substitution with a suitable amount of Sn can eliminate the MgTi2O5phase. The dielectric constants and temperature coefficients of resonant frequency changed slightly with the variation in Sn content in the specimens. However, the quality factors (Q) dramatically improved and were sensitive to the concentration of Sn4+. The high Q value was attributed to the uniform grain, clean and narrow grain boundary, and elimination of the MgTi2O5 phase. Moreover, the composition-optimized Mg(Sn0.05Ti0.95)O3ceramics sintered at 1390°C exhibited excellent microwave dielectric properties of εr = 17.61, Q×f = 328,543GHz, and τf = −42 ppm/°C.
Zhefei Wang,Jiajia Wu,Lixi Wang,Zhenxiao Fu,Qitu Zhang 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.6
Ba(Co1/3Nb2/3)O3 (BCN) ceramics were prepared using a conventional solid-state route. Effects of sintering on microstructure and microwave dielectric properties of Ba(Co1/3Nb2/3)O3 ceramics were systematically investigated. Appropriate sintering temperature could restrain the evaporation of CoO and the formation of Nb-rich phase. The dielectric constants and temperature coefficients of resonant frequency changed slightly with the variation in sintering temperatures. The high Q× f value with prolonged sintering time was related to the improvement of 1 : 2 ordered arrangement in the B site, rather than the compactness of ceramics. Excellent microwave dielectric properties (εr=32.6, Q×f =86857 GHz, τf=−14 ppm/°C) were obtained in the Ba(Co1/3Nb2/3)O3 ceramics sintered at 1380°C for 12 h.