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Zhenqian Hou,Xiaogeng Liang,Wenzheng Wang 한국항공우주학회 2014 International Journal of Aeronautical and Space Sc Vol.15 No.1
For robust stability analysis of parameters uncertainty missiles, the traditional frequency domain method can only analyze each respective channel at several interval points within uncertain parameter space. Discontinuous calculation and couplings between channels will lead to inaccurate analysis results. A method based on the ν-gap metric is proposed, which is able to comprehensively evaluate the robust stability of missiles with uncertain parameters; and then a genetic-simulated annealing hybrid optimization algorithm, which has global and local searching ability, is used to search for a parameters combination that leads to the worst stability within the space of uncertain parameters. Finally, the proposed method is used to analyze the robust stability of a re-entry missile with uncertain parameters; the results verify the feasibility and accuracy of the method.
Hou, Zhenqian,Liang, Xiaogeng,Wang, Wenzheng The Korean Society for Aeronautical and Space Scie 2014 International Journal of Aeronautical and Space Sc Vol.15 No.1
For robust stability analysis of parameters uncertainty missiles, the traditional frequency domain method can only analyze each respective channel at several interval points within uncertain parameter space. Discontinuous calculation and couplings between channels will lead to inaccurate analysis results. A method based on the ${\nu}$-gap metric is proposed, which is able to comprehensively evaluate the robust stability of missiles with uncertain parameters; and then a genetic-simulated annealing hybrid optimization algorithm, which has global and local searching ability, is used to search for a parameters combination that leads to the worst stability within the space of uncertain parameters. Finally, the proposed method is used to analyze the robust stability of a re-entry missile with uncertain parameters; the results verify the feasibility and accuracy of the method.
Yang Zhenqian,Yang Zhaojun 아시아사회과학학회 2021 Jornal of Asia Social Science Vol.3 No.2
Wang Xizhi’s Preface to Lanting combines the beauty of literary language with the beauty of calligraphy art, which is a classic of Chinese traditional culture. However, at present, both middle school education and academic research have their own sides, ignoring the symbiosis between literature and calligraphy. Taking Wang Xizhi s Preface to Lanting as an example, this paper attempts to restore this tradition of both literary quality and beauty by analyzing the relationship between mutually interpreted texts and calligraphy.
Selective laser direct patterning of indium tin oxide on transparent oxide semiconductor thin films
이해창,Zhenqian Zhao,권상직,조의식 한국반도체디스플레이기술학회 2019 반도체디스플레이기술학회지 Vol.18 No.4
For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO4 laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.
Selective Laser Direct Patterning of Indium Tin Oxide on Transparent Oxide Semiconductor Thin Films
Lee, Haechang,Zhao, Zhenqian,Kwon, Sang Jik,Cho, Eou Sik The Korean Society Of SemiconductorDisplay Technol 2019 반도체디스플레이기술학회지 Vol.18 No.4
For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO4 laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.