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Yoon, J.I.,Choi, K.S.,Chang, S.P. Elsevier 2017 Microelectronic engineering Vol.179 No.-
The authors developed a novel method for fabricating microporous dielectric layers on capacitive pressure sensors using a mixture of sugar and PDMS. In order to obtain different layer morphologies, a mold was used to control morphology during 3D printing. The microporous structures of the sensors produced showed enhanced deformability and large changes in dielectric constant. In addition, sensors showed high sensitivities from 0.00832 to 0.01097kPa<SUP>-1</SUP> at low pressure (~10kPa), and from 0.06285 to 0.51285kPa<SUP>-1</SUP>at medium pressure (10-100kPa). Maximum hysteresis was 6.49%, stabilities were 0.1726 at 1kPa and 0.1809 at 50kPa, and response time was 200ms.
Key factors of stretch-flangeability of sheet materials
Yoon, J. I.,Jung, J.,Kim, J. G.,Sohn, S. S.,Lee, S.,Kim, H. S. Springer Science + Business Media 2017 JOURNAL OF MATERIALS SCIENCE - Vol.52 No.13
<P>Stretch-flangeability evaluated using hole-expansion testing represents the ability of sheet materials to resist edge fracture during complex shape forming. Despite a property imperative for automotive part applications of advanced high-strength steels, factors governing stretch-flangeability are not yet well understood. In this study, the mechanical properties of a selected group of materials with different microstructures were investigated using tensile, fracture toughness, and hole-expansion tests to find the factor governing the stretch-flangeability that is universally applicable to a variety of metallic materials. It was found that the fracture toughness of materials, measured using the fracture initiation energy, is a universal factor governing stretch-flangeability. We verified that fracture toughness is the key factor governing stretch-flangeability, showing that the hole-expansion ratio could be well predicted using finite element analysis associated with a simple ductile damage model, without explicitly taking into account the microstructural complexity of each specimen. This validates the use of the fracture toughness as a key factor of stretch-flangeability.</P>
Correlation between fracture toughness and stretch-flangeability of advanced high strength steels
Yoon, J.I.,Jung, J.,Joo, S.H.,Song, T.J.,Chin, K.G.,Seo, M.H.,Kim, S.J.,Lee, S.,Kim, H.S. North-Holland 2016 Materials letters Vol.180 No.-
Stretch-flangeability representing the capability of a sheet material to form into a complex shaped part is not a well-known sheet metal forming property. We correlate mechanical properties with stretch-flangeability of various advanced high strength steels (AHSSs) to capture the stretch-flanging phenomenon and improve the stretch-flangeability of steel sheet materials. The stretch-flangeability of materials is usually evaluated using a hole expansion test. During the hole expansion test, the stress state in the hole edge part of the specimen is almost the same as that of the uniaxial tensile test. However, a single parameter in tensile properties of the AHSSs exhibits no clear correlation with flangeability estimated as the hole expansion ratio (HER). Because micro-cracks in the hole edge region of the hole expansion testing samples play a significant role in HER values, we propose and demonstrate that fracture toughness is the key factor governing the HER of AHSSs.
A Dual-feedback Folded-cascode Fully Differential Transimpedance Amplifier in 65-nm CMOS
Yoonji Park,Sung Min Park 대한전자공학회 2020 Journal of semiconductor technology and science Vol.20 No.3
This paper presents a fully differential transimpedance amplifier (TIA) realized in a standard 65-nm CMOS technology, which exploits a novel dual-feedback folded-cascode input configuration for high transimpedance gain and low input impedance characteristics, and employs active single-to-differential (ASD) circuit particularly for fully differential signaling even from the input stage. Simulated results of the proposed dual-feedback folded-cascode differential (DFD) TIA show 67-dBΩ transimpedance gain, 330-MHz bandwidth for 1.6-pF photodiode capacitance, -77.2-dB power supply rejection ratio at 100 kHz, -26-dBm sensitivity, and 3.38-mW power consumption from a single 1.2-V supply.