http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Yong, Ho,Na, Sekwon,Gang, Jun-Gu,Shin, HaeSun,Jeon, Seong-Jae,Hyun, SeungMin,Lee, Hoo-Jeong Institute of Pure and Applied Physics 2016 Japanese Journal of Applied Physics Vol.55 No.6
<P>In this study, we explore various electrode materials (Au, Ti, and Sb) for use as contact materials on Bi2Te3 and Sb2Te3 thermoelectric films. Using the transmission line method (TLM), we measured the specific resistivity of the contacts, which showed that Au has the lowest contact resistivity for both the thermoelectric films (after annealing): 2.7 x 10(-10)Omega m(2) for Bi2Te3 and 2.9 x 10(-11)Omega m(2) for Sb2Te3. The specific contact resistivity data suggest that the dominant factor for the contact properties is interface states. After annealing, the contact resistivity does not change much for the Bi2Te3 contacts while it drops greatly for the Sb2Te3 ones. Analysis of the carrier transport mechanism across the contacts discloses that changes in the carrier concentration in the thermoelectric films after annealing are responsible for the different behaviors. (C) 2016 The Japan Society of Applied Physics</P>
윤용호 ( Yongho Yoon ),정지훈 ( Jihoon Jung ) 한국화학공학회 2016 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.54 No.5
V-Cr-Y 합금은 높은 투과도와 선택도를 가진 수소 분리막 재료이다. V-Cr-Y 분리막의 투과속도를 증가시키기 위하여 sputtering을 이용한 V-Cr-Y 박막을 제조하고 그 특성을 연구하였다. V-Cr-Y 성분이 각각 89.8%, 10.0%, 0.2%인 타겟을 이용하여 실리콘웨이퍼 위에 박막을 증착시켰으며, EDS 분석을 통해 박막조성이 타겟조성과 일치함을 확인하였다. 스퍼터링 온도와 출력이 증가할수록 박막의 성장속도와 결정크기가 증가하였으며, 압력이 감소할수록 결정구조가 보다 미세하고 치밀해졌다. 최적 스퍼터링 조건은 교류 고주파(RF), 2mTorr, 300W, 상온이었으며, 이 조건으로 제조한 박막을 열처리 하여 수소분리에 적합한 박막을 얻을 수 있었다. V-Cr-Y alloy is a material for hydrogen separation membrane possessing high transmittance and selectivity. In order to increase the rate of hydrogen permeation flux through the membrane, V-Cr-Y thin film was prepared using a sputtering technique and was investigated focusing on its basic properties. Thin film was deposited on a silicon wafer using a target including V (89.8%), Cr (10.0%) and Y(0.2%), and results of EDS analysis confirm that the ratio of metal in thin film agrees with that in the target. Higher sputtering temperature and power resulted in more rapid growth rate of the thin film and larger size of the crystals, and denser and finer crystal structure was observed when lower pressure was applied. An optimal sputtering condition was found with RF, 2mTorr, 300W and ambient temperature, and a suitable V-Cr-Y thin film for hydrogen separation was obtained upon heat treatment of the thin film prepared in this way.
Impact of Substrate Digital Noise Coupling on the High-Frequency Noise Performance of RF MOSFETs
Yongho Oh,Seungyong Lee,Chan Hyeong Park,Jae-Sung Rieh IEEE 2009 IEEE microwave and wireless components letters Vol.19 No.9
<P>The impact of digital noise coupling through the substrate on RF MOSFETs was investigated in terms of the noise figure (NF) of the device up to 26.5 GHz. Previous works on the substrate digital noise coupling have treated the effect mostly in terms of the electrical isolation between ports, rather than actual devices, which does not provide direct information on the degradation of actual device performance parameters from such coupling. In this work, an actual NMOSFET was employed for test and the effect was described in terms of NF, a practical device performance parameter. The results show that NF is significantly degraded as the device enters the weak inversion state and/or <I>V</I> <SUB>ds</SUB> becomes smaller, suggesting a trade-off between low power operation and immunity against the substrate noise coupling. Also, it is experimentally verified that devices with a dual guard ring showed much smaller NF than those with a single guard ring.</P>
Topology Synthesis for Low Power Cascaded Crossbar Switches
Yongho Jang,Jungsoo Kim,Chong-Min Kyung IEEE 2010 IEEE transactions on computer-aided design of inte Vol.29 No.12
<P>Crossbar switch network has an increasing impact on such critical measures as throughput, latency, area, and power consumption of complex system-on-chip as technology scales to deep submicrometer. With high clock frequency crossbar switch network design, global wire delay and pipeline registers inserted for throughput are important because they affect area, frequency, and power consumption of the chip. The traffic congestion is also a very important factor because it leads to the lowering of throughput of the crossbar switch network. In this paper, we present a topology synthesis method for the low-power cascaded crossbar switch network satisfying the given bandwidth, latency, frequency, and area constraints. Unlike previous papers, our paper considers wire delay, traffic congestion, and pipeline register insertion at the same time. Experimental results show that the topologies optimized for power consumption for a given clock frequency consume less power than existing methods by up to 38.04%.</P>
Guidance and Control System Design for Impact Angle Control of Guided Bombs
Yongho Kim,Jongju Kim,Minsu Park 제어로봇시스템학회 2010 제어로봇시스템학회 국제학술대회 논문집 Vol.2010 No.10
Impact angle control has been widely used in a variety of guided weapons. For anti-ship or anti-tank weapons, the terminal impact angle is important for warhead effect. This paper deals with the guidance and control system to impact a target with a desired impact angle for precision guided bombs such as JDAM. The guidance and control system is composed of three-loop autopilot and impact angle control guidance loop. The impact angle control guidance is derived by the solution to the linear quadratic optimal control problem. Nonlinear six degree of freedom simulations are carried out to examine the performance of the system.