中國外換管理制度에 관한 硏究

金汝善,宋錫彦 한국기업법학회 2001 企業法硏究 Vol.8 No.-

This study deals with chinese foreign exchange system. From 1991 to 1993, reforming the foreign exchange mechanism and adopting a double-track system in exchange rate; allowing foreign trade enterprises to retain part of their foreign exchange earnings. From 1994 on: Unifying the dual rates in foreign exchange; thoroughly abolishing the practice of allowing foreign trade enterprises to retain part of their foreign exchange earnings, and adopting a unified system in the settlement and selling of foreign exchange and adopting a unified floating exchange rate for RMB on the basis of market need and supply. China's entry into the WTO will prompt the nation to revise its current laws and regulations and, subsequently, improve foreign exchange system. China will soon adjust regulations for selling and payment of foreign exchange by foreign banks to place them on equal footing with domestic banks. Whether the RMB will devaluate after China's accession to the WTO has been another focal issue in the banking sector. The results may gives that the Chinese Government's commitment to maintain a stable RMB is essential for world financial stability. In addition, it will strengthen investors' confidence in the Chinese economy and therefore protect China's economic interests in the long run. And in the future, consistent efforts will be made to establish a modern foreign exchange system with orderly market competition.

OECD/MAI 及其與中國外資法的關系

金汝善 제주대학교 동아시아연구소 1998 東아시아硏究論叢 Vol.9 No.-

FET형 습도센서의 제조 및 그 특성

이성필,윤여경,김성진 慶南大學校 附設 工業技術硏究所 1998 硏究論文集 Vol.16 No.-

실리콘 마이크로 테크롤로지를 이용하여 MOSFET의 게이트 금속 전극사이에 감습물질인 TiO₂ 박막을 형성하여 MOSFET의 전계효과와 TiO₂박막의 습도감지 특성을 결합시킨 형태의 FET형 습도센서를 제조하고, 습도변화에 따른 감지 특성을 조사하였다. 제조된 HUSFET은 전형적인 enhancement 특성이 나타났으며, 문턱전압은 상대습도 60%에서 약 2.7 V였다. 상대습도가 30%에서 90%로 증가함에 따라 HUSFET의 문턱 전압은 3.0 V에서 2.4 V로 감소하였으며, 드레인 전류는 335μA에서 405μA로 증가하였다. 드레인과 게이트 전압을 고정하였을 때 HUSFET의 감도는 3.2gμA/RH로 나타났다. A new device, named humidity sensitive field effect transistor(HUSFET), for an integrated humidity sensors has been fabricated using conventional silicon micro-technology. The gate structure of the HUSFETs is TiO₂/Si₃N₄/SiO₂and water molecular permeable electrode is formed by thin porous gold. The fabricated devices showed typical enhancement mode characteristics and threshold voltage was about 2.7 V in 60 %RH. It can be seen that the threshold voltages of HUSFET decreased from 3.0 V to 2.4 V and the drain current increased from 335μA to 405 gμA according to increasing the relative humidities from 30% to 90%. The sensitivity of HUSFET was 3.2μA/RH when the drain and gate voltage are constant.

환경 모니터링용 다층구조 TiQ₂ 박막형 습도센서

이성필,윤여경 경남대학교 환경문제연구소 2000 환경연구 Vol.23 No.-

MIS Capacitor multi-layer humidity sensors that Ti0₂/Si0₂/Si₃N₄ and porous gold electrode are deposited onto the gate insulator layer have been fabricated and their characteristics have been investigated for environmental monitoring. The normalized capacitance increased from 0.49 to 0.57, as relative humidity increased from 30% to 90%. The sensor sensitivities at 60% RH and 90% RH were about 17.4% and 29.5%, respectively, and it showed a relatively high linearity. The response time of the fabricated sensor was about 15 sec. in adsorption process.

TiO_(2-X) 박막 습도센서의 제조 및 그 특성

이성필,윤여경 경남대학교 신소재연구소 1996 論文集 Vol.6 No.-

TiO_(2-x) 박막 습도센서를 R.F. 스퍼터링에 의해 제조하고, 스퍼터링 조건과 산소 함유량 그리고 열처리 조건에 따른 습도 감지 특성 및 동작 온도에 따른 특성 등을 조사하였으며, Auger 전자분광기와 전자현미경으로 그 원인을 규명하였다. TiO_(2-x) 박막 습도센서는 부 임피던스 습도특성을 보였으며 가장 높은 감도와 선형성을 보일 때의 산소조성비에 따른 기울기는 x=0.38인 소자가 약 -0.033이었고, 감도는 동작온도가 30℃일 때 74%이었다. 동작온도가 30℃일 때 응답 시간은 흡착시 약 2분, 탈착시에는 약 3분이었다. TiO_{2-x} thin film humidity sensors have been fabricated by sputtering method and their physical and hygroscopic characteristics have been investigated. The sputtering conditions, oxygen contents and sintering conditions affect the sensor's sensitivity toward humidity. AES and SEM micrographs were taken for the analysis of crystal structures. surface morphology caused by adsorbed water vapour. TiO_{2-x} humidity sensors showed negative impedance-humidity characteristics and the sensor which was x=0.38 showed higher sensitivity and linearity than others. Then the slope of the sensor was about -0.033 and the sensitivity was about 74% at the operating temperatute of 30 C. The response time of TiO_{2-x} humidity sensors was about 2 min. for adsorption, and about. 3 min. for desorption at the operating temperature of 30℃.

In-Situ 반응소결에 의한 전도성 Si₃N₄-TiN 복합세라믹스 제조

이병택,박동수,윤여주,김해두 공주대학교 자원재활용 신소재 연구센터 1999 1차년도 센터 성과집 Vol.1999 No.-

전도성 Si₃N₄-TiN세라믹 복합재료를 제조하기 위해 성형체를 1450℃에서 20시간 질화처리한 후 1950℃에서 3.5시간 가스압소결 기술에 의해 후소결하였다. 초기 분말로 약 10㎛로 된 상용 Si분말, 100mesh와 325mesh로 된 Ti분말, 그리고 미세한 2.5㎛ Ti분말을 사용하였다. Ti분말을 사용한 Si₂N₄-TiN소결체에서 상대밀도 및 파괴인성값은 다량의 조대한 기공의 존재로 인하여 낮은 값을 보였다. 그러나 Ti분말을 사용한 Si₃N₄-TiN복합체에서 파괴인성, 파괴강도, 및 전기저항은 각각 5.07MPaㆍm1/2, 624MPa 그리고 1400Ωm였다. 복합체에서 TiN 입자의 분산은 Si₃N₄입자의 조대한 봉상형태로의 성장을 방해아며 Si₂N₄/TiN계면에 강한 변형장을 만든다. Si₂N₄-TiN복합체의 전기전도도 및 기계적 특성을 향상시키기 위해 TiN 입자가 균일하게 분산된 미세조직 제어가 요망된다. In order to maek the electroconductive Si₂N₄-TiN composites, the Si-Ti(N) compacts were nitrided at 1450℃ for 20hours, and thhn they post-sintered by a gas-pressure-sintering technique at 1950℃ for 3.5hours. As starting powders, commercial Si powder of about 10㎛, two types of Ti poweders, the relative density and fracture strength and electrical conductivity are low due to the existence of large amounts of coarse pores. However, in the Si₃N₄-TiN composite used Tin powder, the fracture toughness, fracture strength and electrical resistivity were 5.07MPaㆍm1/2, 624MPa and 1400Ωcm, respectively. The dispersion of TiN particles in the composite inhibited the growht of Si₃N₄, in the shape of rod and made strong strain field contrasts at the Si₃N₄/TiN interfaces. It was recognized that microstructural control is required to improve the electrical conductivity and mechanical properties of Si₃N₄-TiN composites vy dispersing TiN particles homogeneously.

혈액 투석 환자에서 중심정맥 협착에 대한 스텐트 삽입술 : Wallstent Placement

임대승,노상필,이유선,정승현,김보영,이정우,강정아,김정희,이민수,정준용,최시완,정진옥,성인환,이강욱,신영태 충남대학교 의과대학 의학연구소 2002 충남의대잡지 Vol.29 No.1

Stenosis of central vein is a common complication arising after percutaneous subclavian vein catheter insertion performed for temporary vascular access in chronic renal failure patients undergoing hemodialysis. There are several treatment methods for the condition like percutaneous angioplasty(PTA), stent insertion, and surgery, but recent trend is toward PTA and stents. Among the patients diagnosed with chronic renal failure from March 1993 to May 2002 and undergoing hemodialysis through AV fistula, the 14 Patients in whom central vein stenosis arose were selected for the study. A total of 28 percutaneous interventions(5 PTA and 23 stent placement) were performed, and restenosis rate and the time taken till the restenosis in de novo lesions and instant lesions were compared. All 28 cases were operated successfully. The 14 cases that received both anigioplasty and stent placement initially. (de novo lesion : 14 cases), Among the 10 cases with de novo lesion that followed up more than 1 year, 3 cases are currently undergoing hemodialysis without restenosis, and the remaining 7 cases have recurred stenosis with the mean time to restenosis of 10.9 months. In the 7 cases in whom stenosis recurred, 11 interventions were done(instent lesion: 11 cases). 4 of these were using only ballon angioplasty with 100% restenosis rate and the mean time of 3 months until restenosis. The remaining 7 cases were using both balloon angioplasty and stent placement, also with 100% restenosis rate but with the mean time of 12 months until restenosis, which was later than the group receiving only balloon angioplasty. In treating the patients with central vein stenosis, stent placement seems to be more advantageous over PTA in terms of restenosis rate and the mean duration of patency. In the case of instent lesion, inserting the stent for the second time after stenosis recurred lengthened the duration of patency compared to performing balloon angioplasty alone.

부정형 공간내에서의 복사열 교환량 수치해석

유승호(Seung-Ho Yoo),손장열(Jang-Yeu1 Sohn) 대한설비공학회 1994 대한설비공학회 강연회 및 기타간행물 Vol.- No.-

WTO 加入에 따른 中國 外貨導入法과 政策의 改編方向

김부찬,송석언,김여선 제주대학교 동아시아연구소 2000 東아시아硏究論叢 Vol.11 No.-

Vibrio vulnificus에 의한 패혈증 3예

김신무,김유현,신상희,오재세,강숙희,윤여안,이화재,김영옥 대한임상병리사협회 1986 임상병리사회지 Vol.18 No.1