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Optical and scintillation properties of Tb-doped apatite single crystals
Takayuki Yanagida,Noriaki Kawaguchi 한양대학교 세라믹연구소 2019 Journal of Ceramic Processing Research Vol.20 No.6
In the present study, we focus on the Tb-doped Sr-based apatite materials which have a chemical composition of Sr2RE8(SiO4)6O2 where RE denotes the rare earth element. The target materials in this study were Tb 0.5% doped Sr2Gd8(SiO4)6O2, Sr2Y8(SiO4)6O2, Sr2(Gd0.5Lu0.5)8(SiO4)6O2 and Sr2(Gd0.4Lu0.6)8(SiO4)6O2 crystals, and they were synthesized by the floating zone method. When we checked powder X-ray diffraction patter, we confirmed a single phase (JCPDS No:280212) for all the samples. In photoluminescence (PL) and X-ray induced scintillation spectra, some sharp emission lines appeared, and the emission origin was Tb3+ 4f-4f transition. We investigated PL and scintillation decay time profiles, and the main component was 1.8 and 1.3 ms, respectively. Among the samples prepared here, Sr2Gd8(SiO4)6O2 showed the highest scintillation intensity.
Butter Tolerance in Children Allergic to Cow’s Milk
Noriyuki Yanagida,Takanori Minoura,Setsuko Kitaoka 대한천식알레르기학회 2015 Allergy, Asthma & Immunology Research Vol.7 No.2
We performed an oral food challenge (OFC) with 10 g of butter (equivalent of 2.9 mL cow’s milk) and 25-mL heated cow’s milk for 68 children with cow’s milk-allergy. Thirty-eight children reacted only to heated cow’s milk. Twenty-four children reacted to neither heated milk nor butter. Thirty-eight (86.4%) of 44 patients with positive results to the OFC for heated milk could safely tolerate butter. It is highly likely that even children with cow’s milk-allergy who show positive results to an OFC for heated milk can consume butter. The milk-specific IgE value indicative of a negative predictive value of over 95% was 17.8 kUA/L, and patients with low milk-specific IgE values may be able to safely consume butter. Including butter in the diets of patients with milk-allergy after a butter challenge may improve quality of life.
Nagashima, Kazuki,Yanagida, Takeshi,Oka, Keisuke,Kanai, Masaki,Klamchuen, Annop,Rahong, Sakon,Meng, Gang,Horprathum, Mati,Xu, Bo,Zhuge, Fuwei,He, Yong,Park, Bae Ho,Kawai, Tomoji American Chemical Society 2012 NANO LETTERS Vol.12 No.11
<P>This study demonstrates the effect of surroundings on a memristive switching at nanoscale by utilizing an open top planar-type device. NiO<SUB><I>x</I></SUB> and CoO<SUB><I>x</I></SUB> planar-type devices have exhibited a memristive behavior under atmospheric pressure, whereas TiO<SUB>2-<I>x</I></SUB> planar-type devices did not show a memristive switching even under the same surroundings. A memristive behavior of TiO<SUB>2-<I>x</I></SUB> planar-type devices has emerged when reducing an ambient pressure and/or employing a SiO<SUB>2</SUB> passivation layer. These results reveal that a thermodynamical interaction with surroundings critically determines the occurrence of memristive switching via varying a stability of nonstoichiometry. Since this effect tends to be more significant for smaller devices with larger specific surface area, tailoring the surrounding effect by an appropriate passivation will be essential for high density devices.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2012/nalefd.2012.12.issue-11/nl302880a/production/images/medium/nl-2012-02880a_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl302880a'>ACS Electronic Supporting Info</A></P>
Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire
Nagashima, Kazuki,Yanagida, Takeshi,Oka, Keisuke,Taniguchi, Masateru,Kawai, Tomoji,Kim, Jin-Soo,Park, Bae Ho American Chemical Society 2010 NANO LETTERS Vol.10 No.4
<P>A multistate nonvolatile memory operated at sublithographic scale has been strongly desired since other nonvolatile memories have confronted the fundamental size limits owing to their working principles. Resistive switching (RS) in metal−oxide−metal junctions, so-called ReRAM, is promising for next generation high-density nonvolatile memory. Self-assembled oxide nanowire-based RS offers an attractive solution not only to reduce the device size beyond the limitation of current lithographic length scales but also to extract the underlying nanoscale RS mechanisms. Here we demonstrate the multistate bipolar RS of a single Co<SUB>3</SUB>O<SUB>4</SUB> nanowire (10 nm scale) with the endurance up to 10<SUP>8</SUP>. In addition, we succeeded to extract a voltage-induced nanoscale RS mechanism rather than current-induced RS. These findings would open up opportunities to explore not only for the intrinsic nanoscale RS mechanisms with the ultimate size limit but also for next generation multistate three-dimensional ReRAM.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-4/nl9042906/production/images/medium/nl-2009-042906_0001.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl9042906'>ACS Electronic Supporting Info</A></P>
Fluorine‐Mediated Crystallization of Silicon in Plasma‐Enhanced CVD
Lim, Cheolhyun,Yanagida, Takafumi,Hanna, Junichi WILEY‐VCH Verlag 2011 CHEMICAL VAPOR DEPOSITION -WEINHEIM- Vol.17 No.4
<P>Fluorine mediated crystal silicon thin films in plasma‐enhanced chemical vapor deposition were grown using a Si<SUB>2</SUB>H<SUB>6</SUB> and SiF<SUB>4</SUB> gas mixture without an intentional hydrogen dilution. The crystal growth took place at the temperatures above 400°C, and both crystallinity and growth rate were increased with an addition of SiF<SUB>4</SUB>. Optical emission spectroscopy reveals that addition of SiF<SUB>4</SUB> changes the major precursor from SiH<SUB>3</SUB> to SiH<SUB>n</SUB>F<SUB>m</SUB> (n+m≤3), and provides an abundant atomic fluorine ambient. These results indicate that contribution of atomic hydrogen is not indispensable for the crystallization, and atomic fluorine can be an alternative to atomic hydrogen.</P>
Spatial Nonuniformity in Resistive-Switching Memory Effects of NiO
Oka, Keisuke,Yanagida, Takeshi,Nagashima, Kazuki,Kanai, Masaki,Kawai, Tomoji,Kim, Jin-Soo,Park, Bae Ho American Chemical Society 2011 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY - Vol.133 No.32
<P>Electrically driven resistance change phenomenon in metal/NiO/metal junctions, so-called resistive switching (RS), is a candidate for next-generation universal nonvolatile memories. However, the knowledge as to RS mechanisms is unfortunately far from comprehensive, especially the spatial switching location, which is crucial information to design reliable devices. In this communication, we demonstrate the identification of the spatial switching location of bipolar RS by introducing asymmetrically passivated planar NiO nanowire junctions. We have successfully identified that the bipolar RS in NiO occurs near the cathode rather than the anode. This trend can be interpreted in terms of an electrochemical redox model based on ion migration and p-type conduction.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jacsat/2011/jacsat.2011.133.issue-32/ja206063m/production/images/medium/ja-2011-06063m_0003.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/ja206063m'>ACS Electronic Supporting Info</A></P>
Intrinsic Mechanisms of Memristive Switching
Nagashima, Kazuki,Yanagida, Takeshi,Oka, Keisuke,Kanai, Masaki,Klamchuen, Annop,Kim, Jin-Soo,Park, Bae Ho,Kawai, Tomoji American Chemical Society 2011 Nano letters Vol.11 No.5
<P>Resistive switching (RS) memory effect in metal-oxide-metal junctions is a fascinating phenomenon toward next-generation universal nonvolatile memories. However the lack of understanding the electrical nature of RS has held back the applications. Here we demonstrate the electrical nature of bipolar RS in cobalt oxides, such as the conduction mechanism and the switching location, by utilizing a planar single oxide nanowire device. Experiments utilizing field effect devices and multiprobe measurements have shown that the nanoscale RS in cobalt oxides originates from redox events near the cathode with p-type conduction paths, which is in contrast with the prevailing oxygen vacancy based model.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2011/nalefd.2011.11.issue-5/nl200707n/production/images/medium/nl-2011-00707n_0003.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl200707n'>ACS Electronic Supporting Info</A></P>