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Structural modifications of SiOx/DLC films by thermal annealing
Won Jae Yang,Koichi Niihara,Keun Ho Auh 한양대학교 세라믹연구소 2004 Journal of Ceramic Processing Research Vol.5 No.3
SiOx/DLC films were deposited on Si substrates using CH4/(C2H5O)4Si/Ar gas mixtures by PECVD. The films deposited were identified as atomic-scale composite networks consisting mainly of diamond-like a-C:H and silica-like a-Si:O structures with a smaller contribution of Si-C and C-O bonds. Structural modifications of SiOx/DLC films were monitored under thermal annealing in an Ar atmosphere. The structural transitions of the amorphous carbon matrix in the SiOx/DLC films were investigated by a Raman spectrometer. The relationships between the microstructural modifications and mechanical properties are discussed.
Microstructural characteristics and film properties of diamond-like carbon coatings grown by PECVD
Won Jae Yang,Koichi Niihara,Keun Ho Auh 한양대학교 세라믹연구소 2004 Journal of Ceramic Processing Research Vol.5 No.3
Diamond-like carbon (DLC) films were deposited by plasma decomposition of CH4/H2 gas mixtures in a RF glow discharge reactor. The chemical structure of diamond-like carbon films deposited at different bias voltages and CH4 flow contents was investigated by Fourier Transform Infrared (FT-IR) and Raman spectroscopy. An indirect evaluation on the sp3-bonded carbon in the DLC films was made based on the structural information on the sp2-bonded carbon obtained from Raman measurements. The mechanical properties of DLC films deposited at different CH4 flow contents are discussed in terms of Raman parameters such as the position, width and integrated intensities of Raman D and G peaks. The friction coefficient of DLC films was obtained and their frictional behavior was investigated.