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Khan, Muhammad Ibrahim Wasiq,Kim, Suna,Park, Dae-Woong,Kim, Hyoung-Jun,Han, Seok-Kyun,Lee, Sang-Gug IEEE 2018 IEEE transactions on terahertz science and technol Vol.8 No.1
<P>The nonresonant THz response of CMOS FET has been analyzed based on static nonlinearities of the transistor channel. For the applied gate-to-source and drain-to-source signals, the significance of the second-order nonlinear terms is investigated as a function of dc bias conditions. A cross-coupled design for differential excitation of the THz detector is also proposed, and it has been shown, based on analysis as well as through measurements, that a cross-coupled detector topology can give the highest responsivity in an unbiased-drain operation, among the possible detector topologies. A minimum optical noise equivalent power (NEP) of <TEX>$\text{29 pW}/\surd \text{Hz}$</TEX> is measured for the cross-coupled detector topology at 500 GHz with unbiased drain. The change in the polarity of the detector response under certain bias conditions is also explained. This paper gives a comprehensive picture of the behavior of the CMOS THz detector by discussing the design considerations such as readout modes, optimum bias points, and device dimensions with respect to both responsivity and NEP.</P>
Noman Ullah,Faisal Khan,Wasiq Ullah,Abdul Basit,Muhammad Umair,Zeeshan Khattak 한국자기학회 2018 Journal of Magnetics Vol.23 No.2
Magnetic saturation and complex stator structure of Switched Flux Permanent Magnet Machine (SFPMM) compels designers to adopt universally accepted numerical method of analysis i.e. Finite Element Analysis (FEA). FEA is not preferred for initial design due to its computational complexity and is time consuming process because of repeated iterations. This paper presents an accurate analytical approach for initial design of proposed twelve-stator-slot and ten-rotor-tooth (12/10) with trapezoidal slot structure SFPMM. Air-gap Magnetic Equivalent Circuit (MEC) models with Global Reluctance Network (GRN) methodology is utilized for calculation of open-circuit flux linkage. Fourier Analysis (FA) for cogging torque, and Maxwell Stress Tensor (MST) method for electromagnetic torque where radial and tangential components of the air-gap flux density are produced by the currents flowing in three phase armature winding. Analytical predictions are validated by FEA utilizing JMAG software and shows errors less than ~2% for open-circuit flux linkage, ~4.2% for cogging torque, and ~2% for average electromagnetic torque.
Effects of Parasitic Source/Drain Junction Area on Terahertz Responsivity of MOSFET Detector
Kim, Suna,Khan, Muhammad Ibrahim Wasiq,Park, Dae-Woong,Lee, Sang-Gug,Kim, Kyung Rok IEEE 2018 IEEE transactions on terahertz science and technol Vol.8 No.6
<P>This paper reports the effect of the source/drain junction area on the responsivity of a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source junction area than drain junction area. For experimental verification, three types of MOSFET detectors with different source/drain junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest drain junction area and the largest source junction area.</P>