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Sato, Y.,Iijima, T.,Adamczyk, K.,Aihara, H.,Asner, D. M.,Atmacan, H.,Aushev, T.,Ayad, R.,Aziz, T.,Babu, V.,Badhrees, I.,Bakich, A. M.,Bansal, V.,Behera, P.,Bhardwaj, V.,Bhuyan, B.,Biswal, J.,Bonvicini American Physical Society 2016 Physical review. D Vol.94 No.7
<P>We report a measurement of the ratio R(D*) = B((B) over bar (0) -> D*(+)tau(-)(nu) over bar (tau))/B((B) over bar (0) -> D*(+)l(-)(nu) over bar (l))where l denotes an electron or a muon. The results are based on a data sample containing 772 x 10(6) B (B) over bar pairs recorded at the Upsilon(4S) resonance with the Belle detector at the KEKB e(+)e(-) collider. We select a sample of B-0(B) over bar (0) pairs by reconstructing both B mesons in semileptonic decays to D*(-/+)l(+/-). We measure R(D*) = 0.302 +/- 0.030(stat) +/- 0.011(syst), which is within 1.6 sigma of the Standard Model theoretical expectation, where the standard deviation sigma includes systematic uncertainties. We use this measurement to constrain several scenarios of new physics in a model-independent approach.</P>
Measurements of the absolute branching fractions of B+→Xcc¯K+ and B+→D¯(*)0π+ at Belle
Kato, Y.,Iijima, T.,Adachi, I.,Aihara, H.,Al Said, S.,Asner, D. M.,Aulchenko, V.,Aushev, T.,Ayad, R.,Babu, V.,Badhrees, I.,Bakich, A. M.,Bansal, V.,Barberio, E.,Behera, P.,Bhardwaj, V.,Bhuyan, B.,Bisw American Physical Society 2018 Physical Review D Vol.97 No.1
<P>We present the measurement of the absolute branching fractions of B+ -> Xc (c) over barK+ and B+ -> (D) over bar ((*)0)pi(+) decays, using a data sample of 772 x 10(6) B (B) over bar pairs collected at the gamma(4S) resonance with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider. Here, X-c (c) over bar denotes eta(c), J/psi, chi(c0), chi(c1), eta(c) (2S), psi(2S), psi(3770), X(3872), and X(3915). We do not observe significant signals for X(3872) or X(3915) and set the 90% confidence level upper limits at B(B+ -> X(3872)K+) < 2.6 x 10(-4) and B(B+ -> X(3915)K+) < 2.8 x 10(-4). These represent the most stringent upper limit for B(B+ -> X(3872)K+) to date and the first limit for B(B+ -> X(3915)K+). The measured branching fractions for eta(c) and eta(c)(2S) are the most precise to date, B(B+ -> eta K-c(+)) = (12.0 +/- 0.8 +/- 0.7) x 10(-4) and B(B+ -> eta(c)(2S)K+) = (4.8 +/- 1.1 +/- 0.3) x 10(-4), where the first and second uncertainties are statistical and systematic, respectively.</P>
Chalapathy, R.B.V.,Gang, Myeng Gil,Hong, Chang Woo,Kim, Ji Hun,Jang, Jun Sun,Yun, Jae Ho,Kim, Jin Hyeok Elsevier 2018 SOLAR ENERGY -PHOENIX ARIZONA THEN NEW YORK- Vol.159 No.-
<P><B>Abstract</B></P> <P>In this work, earth-abundant CZTSSe thin film solar cells were fabricated by sulfo-selenization of the Mo/Zn/Cu/Sn/Cu metallic precursors. The influences of morphological and compositional properties of the absorbers on performance of solar cells were investigated by tuning Cu content in the films. The Raman analysis showed that absorbers consist of a kesterite CZTSSe phase with ZnSe as a minor secondary phase. X-ray photoelectron spectroscopy (XPS) analyses revealed that the surfaces are Cu depleted and Zn enriched compared with the bulk composition of the absorbers. The results indicate that during sulfo-selenization the Cu diffused into the film and the Zn towards the film surface. The performance of the solar cells initially improved with the increasing of the Cu content and then decreased. By tuning the Cu content in the absorbers, the minority-carrier life time improved from 0.8 to 1.6 ns. The power conversion efficiency increased from 5.1 to 8.03% with fine controlling of Cu composition of the CZTSSe absorbers. The diode-ideality factors are higher than 2, suggesting an increased interfacial recombination in the devices. The high ideality-factors A and low minority carrier life times may originate from surface and bulk related defects, which in turn limits the V<SUB>oc</SUB> and the achievable high conversion efficiency for the CZTSSe thin film solar cells.</P> <P><B>Highlights</B></P> <P> <UL> <LI> CZTSSe thin film solar cells were fabricated by sulfo-selenization of sputtered metallic Mo/Zn/Cu/Sn/Cu precursors. </LI> <LI> The surface composition of the absorbers was Cu depleted and Zn rich compared to the bulk of the absorbers. </LI> <LI> The ideality factors ‘A’ over 2 suggest that increased interface recombination in the devices which reduced the open circuit voltage of the devices. </LI> <LI> By tuning the Cu content in the absorbers solar cells with conversion efficiency about 8.03% was obtained. And the best efficiency of 8.17% was achieved without an antireflection coating. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Glattauer, R.,Schwanda, C.,Abdesselam, A.,Adachi, I.,Adamczyk, K.,Aihara, H.,Al Said, S.,Asner, D. M.,Aushev, T.,Ayad, R.,Aziz, T.,Badhrees, I.,Bakich, A. M.,Bansal, V.,Barberio, E.,Bhuyan, B.,Biswal, American Physical Society 2016 Physical Review D Vol.93 No.3
<P>We present a determination of the magnitude of the Cabibbo-Kobayashi-Maskawa matrix element vertical bar V-cb vertical bar using the decay B -> Dl nu(l) (l = e,mu) based on 711 fb(-1) of e(+)e(-) -> Upsilon(4S) data recorded by the Belle detector and containing 772 x 10(6) B (B) over bar pairs. One B meson in the event is fully reconstructed in a hadronic decay mode, while the other, on the signal side, is partially reconstructed from a charged lepton and either a D+ or D-0 meson in a total of 23 hadronic decay modes. The isospin-averaged branching fraction of the decay B -> Dl nu(l) is found to be B(B-0 -> D(-)l(vertical bar)nu(l)) = (2.31 +/- 0.03(stat) +/- 0.11(syst))%. Analyzing the differential decay rate as a function of the hadronic recoil with the parametrization of Caprini, Lellouch, and Neubert and using the form-factor prediction G(1) = 1.0541 +/- 0.0083 calculated by FNAL/MILC, we obtain eta(EW)vertical bar V-cb vertical bar = (40.12 +/- 1.34) x 10(-3), where eta(EW) is the electroweak correction factor. Alternatively, assuming the model-independent form-factor parametrization of Boyd, Grinstein, and Lebed and using lattice QCD data from the FNAL/MILC and HPQCD collaborations, we find eta(EW)vertical bar V-cb vertical bar = (41.10 +/- 1.14) x 10(-3).</P>
Measurements of B→J/ψ at forward rapidity in p+p collisions at s=510 GeV
Aidala, C.,Ajitanand, N. N.,Akiba, Y.,Akimoto, R.,Alexander, J.,Alfred, M.,Aoki, K.,Apadula, N.,Asano, H.,Atomssa, E. T.,Attila, A.,Awes, T. C.,Ayuso, C.,Azmoun, B.,Babintsev, V.,Bai, M.,Bai, X.,Banni American Physical Society 2017 Physical Review D Vol.95 No.9
<P>We report the first measurement of the fraction of J/psi mesons coming from B-meson decay (F (B -> J/psi)) in p + p collisions at root s = 510 GeV. The measurement is performed using the forward silicon vertex detector and central vertex detector at PHENIX, which provide precise tracking and distance-of-closest-approach determinations, enabling the statistical separation of J=. due to B-meson decays from prompt J/psi. The measured value of F (B -> J/psi) is 8.1% +/- 2.3% (stat) +/- 1.9% (syst) for J/psi with transverse momenta 0 < p(T) < 5 GeV/c and rapidity 1.2 < vertical bar y vertical bar < 2.2. The measured fraction F (B -> J/psi) at PHENIX is compared to values measured by other experiments at higher center of mass energies and to fixed-order-next-toleading- logarithm and color-evaporation-model predictions. The b (b) over bar cross section per unit rapidity [d sigma/dy(pp -> b (b) over bar)] extracted from the obtained F (B -> J/psi) and the PHENIX inclusive J/psi cross section measured at 200 GeV scaled with color-evaporation-model calculations, at the mean B hadron rapidity y = +/- 1.7 in 510 GeV p + p collisions, is 3.63(-1.70)(+1.92) mu b. It is consistent with the fixed-order-next-toleading- logarithm calculations.</P>
Search for B→hνν¯ decays with semileptonic tagging at Belle
Grygier, J.,Goldenzweig, P.,Heck, M.,Adachi, I.,Aihara, H.,Al Said, S.,Asner, D. M.,Aushev, T.,Ayad, R.,Aziz, T.,Babu, V.,Badhrees, I.,Bahinipati, S.,Bakich, A. M.,Bansal, V.,Barberio, E.,Behera, P.,B American Physical Society 2017 Physical Review D Vol.96 No.9
<P>We present the results of a search for the rare decays B -> h nu(nu) over bar, where h stands for K+, K-S(0), K*(+); K*(0); pi(+); pi(0), rho(+) and rho(0). The results are obtained with 772 x 10(6) B (B) over bar pairs collected with the Belle detector at the KEKB e(+)e(-) collider. We reconstruct one B meson in a semileptonic decay and require a single h meson but nothing else on the signal side. We observe no significant signal and set upper limits on the branching fractions. The limits set on the B-0 -> K-S(0)nu(nu) over bar, B-0 -> K*(0)nu(nu) over bar, B+ -> pi(+)nu(nu) over bar, B-0 -> pi(0)nu(nu) over bar, B+ -> rho(+)nu(nu) over bar, and B-0 -> rho(0)nu(nu) over bar channels are the world's most stringent.</P>
Julius, T.,Sevior, M. E.,Mohanty, G. B.,Adachi, I.,Aihara, H.,Al Said, S.,Asner, D. M.,Aulchenko, V.,Aushev, T.,Ayad, R.,Babu, V.,Badhrees, I.,Bakich, A. M.,Bansal, V.,Barberio, E.,Barrett, M.,Berger, American Physical Society 2017 Physical Review D Vol.96 No.3
<P>We measure the branching fraction and CP violation asymmetry in the decay B-0 -> pi(0)pi(0), using a data sample of 752 x 10(6) B (B) over bar pairs collected at the Y(4S) resonance with the Belle detector at the KEKB e(+)e(-) collider. The obtained branching fraction and direct CP asymmetry are B(B -> pi(0)pi(0)) = [1.31 +/- 0.19(stat) +/- 0.19(syst)] x 10(-6) and A(CP) = +0.14 +/- 0.36(stat) +/- 0.10(syst), respectively. The signal significance, including the systematic uncertainty, is 6.4 standard deviations. We combine these results with Belle's earlier measurements of B-0 -> pi(+)pi(-) and B-+/- -> pi(+/-)pi(0) to exclude the CP-violating parameter phi(2) from the range 15.5 degrees < phi(2) < 75.0 degrees at 95% confidence level.</P>
Measurement of|Vub|from Inclusive Charmless SemileptonicBDecays
Urquijo, P.,Barberio, E.,Adachi, I.,Aihara, H.,Arinstein, K.,Bakich, A. M.,Belous, K.,Bhardwaj, V.,Bischofberger, M.,Bozek, A.,Brač,ko, M.,Browder, T. E.,Chao, Y.,Chen, A.,Cheon, B. G.,Chistov, R American Physical Society 2010 Physical review letters Vol.104 No.2
<P>We present the partial branching fraction for inclusive charmless semileptonic B decays and the corresponding value of the Cabibbo-Kobayashi-Maskawa matrix element vertical bar V-ub vertical bar, using a multivariate analysis method to access similar to 90% of the B -> X(u)l nu phase space. This approach dramatically reduces the theoretical uncertainties from the b-quark mass and nonperturbative QCD compared to all previous inclusive measurements. The results are based on a sample of 657 X 10(6) B (B) over bar pairs collected with the Belle detector. We find that Delta B(B -> X(u)l nu; p(l)*(B) > 1.0 GeV/c) = 1.963X(1 +/- 0.088(stat) +/- 0.081(syst)) X 10(-3). Corresponding values of vertical bar V-ub vertical bar are extracted using several theoretical calculations.</P>
Lokhande, A.C.,Chalapathy, R.B.V.,Jang, J.S.,Babar, P.T.,Gang, M.G.,Lokhande, C.D.,Kim, Jin Hyeok North-Holland 2017 Solar Energy Materials and Solar Cells Vol. No.
<P><B>Abstract</B></P> <P>In the present work, Ge doped CZTGeS thin films are pulsed laser deposited followed by annealing treatment in selenium environment. The influence of selenization condition on the structural, morphological, optical and electrical properties of the absorber thin films are investigated. The thin films characterized using X-ray diffraction (XRD) and Raman spectroscopy techniques confirm the formation of Kesterite CZTGeSSe thin film compound with dominant A1 mode vibration. The morphological and optical studies of the thin films reveal the formation of compact and void free microstructure with optimal band gap in the range of 1–1.2eV. The impact of selenization temperature on the quality of thin films has been studied and thin film solar cells are fabricated with CZTGeSSe absorbers grown at various annealing temperatures from 525 to 575℃ to evaluate the performance of devices as a function of an annealing temperature. The elemental Ge and Sn losses from the absorber compound confirmed from X-ray fluorescence spectroscopy (XRF) depended on the annealing temperature and linearly increased with increasing temperature affecting the optical, compositional and microstructural properties of the thin films. Compositional non uniformity is one of the factors that limit the performance of solar cell device. PLD technique due to its advantage of achieving precise stoichiometry control combined with optimized selenization conditions can potentially address the issue. Compared to solar cell fabricated from absorber compound annealed at 525 and 575℃, the solar cell fabricated from the absorber annealed at 550℃ exhibited the best conversion efficiency of 3.82% with V<SUB>oc</SUB> 434mV, J<SUB>sc</SUB> 18.33mA/cm<SUP>2</SUP>, FF 47.0% and retained nearly 90% power conversion efficiency (PCE) stability after time period of 60 days.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Pulsed laser deposition of Ge doped CZTS thin films. </LI> <LI> Band gap tuning of CZTGeS thin films with selenization treatment. </LI> <LI> Effect of annealing conditions on structural, optical and morphological properties of CZTGeSSe thin films. </LI> <LI> Fabrication of CZTGeSSe thin film solar cells with efficiency over 3.82%. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Acoustic emission technique to identify stress corrosion cracking damage
V. Soltangharaei,J.W. Hill,Li Ai,R. Anay,B. Greer,M. Bayat,P. Ziehl 국제구조공학회 2020 Structural Engineering and Mechanics, An Int'l Jou Vol.75 No.6
In this paper, acoustic emission (AE) and pattern recognition are utilized to identify the AE signal signatures caused by propagation of stress corrosion cracking (SCC) in a 304 stainless steel plate. The surface of the plate is under almost uniform tensile stress at a notch. A corrosive environment is provided by exposing the notch to a solution of 1% Potassium Tetrathionate by weight. The Global b-value indicated an occurrence of the first visible crack and damage stages during the SCC. Furthermore, a method based on linear regression has been developed for damage identification using AE data.