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지점부 하부플랜지에 고강도 콘크리트를 합성한 강 박스거더교의 정적 특성 분석
차태권(Cha, Taegweon),장일영(Jang, Ilyoung) 한국방재학회 2021 한국방재학회논문집 Vol.21 No.1
강 박스거더 교량은 비틀림 강성이 크므로 곡선교에 대한 적용성이 우수하며 가설시 세그멘트의 중량이 콘크리트 교량 대비 작아서 중경간 교량에 대한 적용사례가 많다. 그러나 70 m 이상의 장경간 교량 적용시에는 강 박스거더의 지점부 형고가 커지므로 거더 제작 및 운반과 가설시에 불리해진다. 따라서 대블럭의 크레인 가설 등 시공을 용이하게 하기 위해서는 공법 개량이 필요하다. 이에 연속경간 지점부의 하부플랜지에 고강도 콘크리트를 합성하여 상부슬래브와 이중합성되는 박스거더교의 구조계를 제안하고 구조적 성능을 유한요소해석과 실물시험체의 정적재하실험을 통해 비교 검증하였다. 이러한 구조계는 단면효율 최적화로 연속지점부 형고를 최소화하며, 사용성 측면에서도 개선된 구조임을 확인하였다. The steel box girder bridge has excellent applicability to curved bridges owing to its large torsional rigidity. In addition, because the weight of the segments is smaller than that of concrete bridges, it also has many applications for medium-range bridges. However, when a bridge with a span greater than 70 m is constructed, the height of the steel box girder increases, which is disadvantageous for the manufacture and transportation of girders and for bridge construction. Therefore, improvements in the construction methods are required to facilitate construction. Therefore, a structural system of a double composite box girder bridge with an upper slab and composite high-strength concrete at the lower flange of the support of continuous span was proposed, and the structural performance was verified by finite element analysis and a static loading test of an actual specimen. It was confirmed that such a structure minimizes the height of the girder of continuous support by optimizing the sectional efficiency and also improves usability.
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Park, Won-Tae,Son, Inyoung,Park, Hyun-Woo,Chung, Kwun-Bum,Xu, Yong,Lee, Taegweon,Noh, Yong-Young American Chemical Society 2015 ACS APPLIED MATERIALS & INTERFACES Vol.7 No.24
<P>Here, we report on a simple and high-rate oxidization method for producing solution-based compound mixtures of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) metal-oxide semiconductors (MOS) for thin-film transistor (TFT) applications. One of the issues for solution-based MOS fabrication is how to sufficiently oxidize the precursor in order to achieve high performance. As the oxidation rate of solution processing is lower than vacuum-based deposition such as sputtering, devices using solution-processed MOS exhibit relatively poorer performance. Therefore, we propose a method to prepare the metal-oxide precursor upon exposure to saturated water vapor in a closed volume for increasing the oxidization efficiency without requiring additional oxidizing agent. We found that the hydroxide rate of the MOS film exposed to water vapor is lower than when unexposed (≤18%). Hence, we successfully fabricated oxide TFTs with high electron mobility (27.9 cm<SUP>2</SUP>/V·s) and established a rapid process (annealing at 400 °C for 5 min) that is much shorter than the conventional as-deposited long-duration annealing (at 400 °C for 1 h) whose corresponding mobility is even lower (19.2 cm<SUP>2</SUP>/V·s).</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2015/aamick.2015.7.issue-24/acsami.5b04374/production/images/medium/am-2015-04374j_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am5b04374'>ACS Electronic Supporting Info</A></P>
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