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Sung–Hee Lee,Eun-Young Lee 보안공학연구지원센터 2015 International Journal of Software Engineering and Vol.9 No.12
Purpose: This study attempted using a descriptive survey to elucidate the influence of anxiety and dyadic adjustment on maternal–fetal attachment in high-risk pregnant women. Methods: The data used in this study were collected from March 3rd, 2015, to March 30th, 2015, and the participants were 118 pregnant women including those undergoing prenatal tests and those admitted to a delivery room in the obstetrics outpatient center of 3 university hospitals located in B, D, and Y after diagnosis with high-risk pregnancy during 20–38 weeks of gestation. Collected data were analyzed using frequency, percentage, mean, standard deviation, t-test, ANOVA, Pearson’s correlation, and stepwise regression analysis using the IBM SPSS 22.0 program. Results: The level of maternal–fetal attachment according to participants’ general and obstetric characteristics showed significant differences in history of childbirth, prenatal tests, and planned pregnancy. The factors that influenced maternal–fetal attachment were history of childbirth, prenatal tests, anxiety, and dyadic adjustment. Lower anxiety and high dyadic adjustment of high-risk pregnant women led to a high maternal–fetal attachment. Among them, anxiety was the factor with the greatest impact, explaining 20.5%. Conclusion: This study presents the need for development and application of prenatal nursing intervention to enhance maternal–fetal attachment by lowering anxiety through prenatal care in high-risk pregnant women and improving dyadic adjustment.
Young-HyunChoi,Sang-HwanKim,Young-UkKwon,Chang-HeeLee,Jung-SooLee,Hae-SubShim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
Temperature-dependent neutron diffraction studies were performed on the ferromagnetic layered manganites La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ ($x$ = 0.35 and 0.4), and the detailed temperature variations of the crystal and the magnetic structures are reported. The ferromagnetic Mn-spins had temperature-dependent orientations. The spins were tilted towards the $c$-axis of the tetragonal unit cell, perpendicular to the perovskite layer at the onset of the ferromagnetic state and as the temperature was lowered gradually rotated to the ab-plane to tilting angles ($\theta$) against the $c$-axis of 62(1)$^\circ$ and 65(2)$^\circ$ for the $x$ = 0.35 and 0.4 compounds, respectively. A simple model based on crystal field theory is proposed to explain the variation of the tilting angle with the composition and the temperature of the compounds with 0.30$<x<$0.4.
Current Dispersion E ects of Planar-Type AlGaN/GaN HFET's Grown by MOCVD
Chang-SeokKim,Jin-SikYun,Byung-KwonChoi,Jae-EungOh,Sung-BumBae,Jung-HeeLee,Jong-WookKim,Jae-SeungLee,Jin-HoShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.2
Low frequency-transconductance dispersion and pulsed I-V measurements have been taken on a planar-type an AlGaN/GaN heterostructure field-effect transistor (HFET) to study the effect of trap states on its current-voltage (I-V) characteristics. The transconductance as a function of frequency ranging from 1 Hz to 100 kHz was measured at various temperatures and bias conditions. We have observed the existence of electron traps associated with the surface states or bulk traps. These electron traps are responsible for the decrease of the transconductance and the drain current collapse. From the Arrhenius plot, a relatively slow state with an activation energy of 47.2 meV has been identified. To expect microwave power performance of the device, the pulsed I-V characteristic was measured in dierent class operations. A model to explain the observed current collapse has been suggested.