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      • 오렌지 껍질로부터 분리된 프라보노이드의 화학요법 감작효과

        최철익,변익건,차윤정,김선필,민영돈,유진철,송재경 조선대학교 2001 The Medical Journal of Chosun University Vol.26 No.2

        Background and Objectives : The overexpression of P-glycoprotein (Pgp) or multidrug resistanceassociated protein (MRP) confers multidrug resistance (MDR) to cancer cells. MDR cells could be sensitized to anticancer drugs when treated concomitantly with a chemosensitizer. In this study, orange peel have been screened for the development of chemosensitizers reversing MDR. Materials and methods : Expression of Pgp in AML-2/WT and AML-2/D100 were determined using western blot analysis and RT-PCR. Candidates for chemosensitizers were isolated, purified from orange peel using sephadex LH-20 column chromatography and silica-gel column chromatography, whose structure was determined using ^1H-NMR, ^13C-NMR, ^1H-^1H-COSY, 13C-NMR, EI-Mass, IR. Chemosensitizing effect of NP-28 on AML-2/DX100 over expressing Pgp and MRP was determined by the MTT assay. Membrane toxicity was evaluated by the RBC hemolysis test. Antioxidant effects were examined by using a fluorescence probe (2’-7’-dichlorofluorescein diacetate). Results : A potent candidate, NP-28, has a flavonoid nucleus with some methoxy moiety. NP-28 is believed to have high therapeutic index, being non-transportable inhibitor and possibly, of inhibiting other efflux pumps such as MRP and antioxidant effects. NP-28 is also unlikely to be a substrate of Pgp. NP-28 did not increase Pgp levels. Conclusion : NP-28 has a Chemosensitizing effect to reverse Pgp-mediated MDR by increasing the intracellular accumulation of drugs. Furthermore, they do not increase expression of Pgp, which can allow a long term use without the concern about Pgp activation. NP-28 is anticipated as an ideal second-generation flavonoid chemosensitizer and/or possibly other therapeutic agents by further investigation.

      • KCI등재
      • 全北經濟의 停滯性 克服에 관한 硏究

        崔洛弼,朴承基,安津,朴泰植,李海經,金宣坤 全北大學校 1991 論文集 Vol.33 No.-

        This research is to give light upon the cause of stagnated economy of Chonbuk province by comparing the interreginal conditions of economy mainly since 1960s which is the period between Japanese Colony and the development of this province, and to propose its measures to overcome it. Chonbuk region, Since its opening of Kunsan port, through the term of Japanese colony, had been degenerated into a relative area of stagnation compared with other areas due to land seizure and exploitation of agricultural products by Japan. Thus since the opening of port the structure of economy in Chonbuk region was deformed into that is typical monoculture from colonial exploitation. Of course, althrough the structure of Korean economy under Japanese colony was generally maimed through exploitative structure of economy, it was demonstrated by substantiation data, that Chonbuk region with its opulent exploited as a primary object area of exploitation by Japan. Deprived of its autogenous vitality and alienated even from "the age of development" for decades, economical structure of Chonbuk province couldn't but be still aggravated rather than improved. Eventurally the gap between present growing regions is more over deepening through the compound geometrical functions of various factors that restrict regional development of economy as analyzed above.

      • 수소화 비정질 실리콘 박막 트랜지스터 특성의 2차원 수치해석

        최종선,이필주 弘益大學校 科學技術硏究所 1995 科學技術硏究論文集 Vol.6 No.-

        A non-uniform finite-difference Thin Film Transistor Simulation Program (TFTSP) has been developed with very flexible and accurate physical model for hydrogenated amorphous silicon. In order to insure its usefulness and versatility as an analytic and design tool the code has been employed to compute the static terminal characteristics of a-Si:H TFTs under a wide range of bias conditions to allow the comparision of the model with experiment. On the basis of the usefulness of this computer model. TFTSP has been employed to analyze the source/drain contact behavior and/or other geometric factors of a-Si:H TFTs. The effects of the channel and overlap length on TFT performances have been analyzed to suggest the principles for the optimum transistor design.

      • KCI등재

        중학교 가정 교과 수행평가 방법 및 도구 개발

        박선영,조필교,이양심,윤인경,임양순,최창숙,장명희 한국 가정과 교육 학회 1998 한국가정과교육학회지 Vol.10 No.2

        The purpose of the study is to develop a Performance Assessment Method & Tools for Home Economics at middle school. Through the content analyses of middle school Home Economics curriculum and 8 textbooks of lst, 2nd, and 3rd grade respectively, teching elements for each content area were drawn and each specific learning objectives were idntified accordingly. In addition, assessment element for student's performance in each teaching element were specified for analysis. Analytic framework for the development of Performance Assessment Method and Tools were proposed by each teaching element. Beased on the analytic framework proposed, a model method and tools were developed by 10 different test measures of description written test, statement written test, oral test, pro and con discussion, performance test, experiment, interview, observation, self-test report, and portfolio. The model proposed in the study has been modified and improved through the feasibility studies of experts' examination and field research application. The model assessment method and tools for the study has been compleeted finally by proposing 45 performance assessment tools for the content areas of food, clothing, housing, resource management and consumerism, human development and family relationship.

      • Oxide-CMP 연마 특성 개선을 위한 실리카 슬러리 온도 영향 분석

        이우선,고필주,최창주 조선대학교 에너지.자원신기술연구소 2004 에너지·자원신기술연구소 논문지 Vol.26 No.2

        Chemical mechanical polishing (CMP) Process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP perfbrmance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP process for ULSI multi-level interconnection technology.

      • 여자 체조 이단평행봉 연기에 대한 분석

        이보선,박순호,이필영,최정현 龍仁大學校 體育科學硏究所 2001 體育科學硏究論叢 Vol.11 No.1

        The purpose of the study is to help Korean women gymnasts get better grades in the international sports arena by understanding the world trends in this field based on the analyses of performances in the parallel bars, the weakest event among the four Korean women's gymnastic events. Value, connection value by which bonus points can be obtained, and start value were analyzed, excluding demerit marks in general performances, impressions, and art. The results of the study are as follows. In the analysis of value, the top four athletes implemented more parts than the average level while the four Korean athletes achieved less than the average level. According to the analysis of value parts D and E, the top four athletes received an average of 0.675 bonus points while the Koreans got 0.15, showing a great difference among them. The analysis of connection value by which bonus points can be obtained also showed stark contrast between the top four athletes and the Koreans marking bonus points of 0.50 and 0.075, respectively. The average start value of the top four athletes was 9.95, 0.925 higher than that of the Korean athletes of 9.025, which can be considered as a big difference. It is suggested that Korean athletes should focus on conducting high level of value parts and connection value to make greater achievements in the international sports arena, considering general demerit points were not included in this study. They are also needed to be confident in order to act to the best of their abilities.

      • 스퍼터로 제작된 WO₃박막의 CMP 광역평탄화 특성

        이우선,고필주,최권우,정수복,최창주 조선대학교 에너지.자원신기술연구소 2003 에너지·자원신기술연구소 논문지 Vol.25 No.2

        Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). We investigated the performance of WO₃ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the WO₃ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

      • CMP 실리카 슬러리 노화 현상에 대한 연구

        이우선,최권우,고필주,서용진 조선대학교 에너지.자원신기술연구소 2003 에너지·자원신기술연구소 논문지 Vol.25 No.1

        As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. It is well known that the presence of hard and larger size particles in the CMP slurries increases the defect density and surface roughness of the polished wafers. In this paper, we have studied aging effect the of CMP slurry as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

      • 스퍼터로 제작된 WO ₃박막의 CMP 광역평탄화 특성

        이우선,최창주,고필주,최권우 조선대학교 에너지.자원신기술연구소 2004 에너지·자원신기술연구소 논문지 Vol.26 No.1

        Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of WO_(3) CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the WO_(3) CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

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