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Shun-Chiao Chang 연세대학교 동서문제연구원 2014 Global economic review Vol.43 No.3
The study attempts to investigate the features and determinants of China’s outward foreign direct investment (OFDI) into 138 countries and Chinese firms’ investment strategies over the 2003–2009 period using an augmented gravity model with spatial linkages. The respective evaluations of China’s OFDI are indicative of the important role played by non-financial OFDI. At the same time, Chinese firms prefer to invest in high-tech industries in developed countries while also focusing on the extraction of natural resources around the world. The empirical findings show that the host country’s economic size has a significantly positive effect in terms of promoting Chinese OFDI. Chinese firms favour a complex-vertical platform in the developed countries while they prefer a market potential foreign direct investment (FDI) surrounding the host developing countries and an export-platform FDI in the petroleum exporting countries based on the surrounding market potential effect and spatial effect. The fuel extraction motive plays a key role in China’s OFDI in line with the realities of Chinese FDI strategies in recent years.
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Shun-Chiao Chang 연세대학교 동서문제연구원 2009 Global economic review Vol.38 No.1
This study investigates the features and determinants of the horizontal and vertical intra-industry trade (HIIT and VIIT) and firms’ investment strategies of the information and communications technology (IT) industry in the Asian, European Union and US markets from 1996 to 2005. The respective evolutions of the HIIT and VIIT of the IT industry indicate that HIIT has often dominated VIIT in the IT industry, which is obviously contrary to the present pattern of world trade. The empirical results further reveal the principal pattern of the IT firms’ foreign direct investment strategies as facilitating the market rather than seeking efficiency in the host regions. The effect of revealed comparative advantage in relation to VIIT and HIIT demonstrates that vertical specialization is significant between Asia and the EU whereas horizontal specialization plays a key role between Asia and the US. The Asian financial crisis significantly promoted VIIT in regard to Asian IT firms in the US market. Finally, regional trade associations such as the EU and ASEAN have strengthened the vertical specialization of EU IT firms in Asian countries. This study investigates the features and determinants of the horizontal and vertical intra-industry trade (HIIT and VIIT) and firms’ investment strategies of the information and communications technology (IT) industry in the Asian, European Union and US markets from 1996 to 2005. The respective evolutions of the HIIT and VIIT of the IT industry indicate that HIIT has often dominated VIIT in the IT industry, which is obviously contrary to the present pattern of world trade. The empirical results further reveal the principal pattern of the IT firms’ foreign direct investment strategies as facilitating the market rather than seeking efficiency in the host regions. The effect of revealed comparative advantage in relation to VIIT and HIIT demonstrates that vertical specialization is significant between Asia and the EU whereas horizontal specialization plays a key role between Asia and the US. The Asian financial crisis significantly promoted VIIT in regard to Asian IT firms in the US market. Finally, regional trade associations such as the EU and ASEAN have strengthened the vertical specialization of EU IT firms in Asian countries.
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Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors
Tze-Ching Fung,Chiao-Shun Chuangc,Kenji Nomura,Han-Ping David Shieh,Hideo Hosono,Jerzy Kanicki 한국정보디스플레이학회 2008 Journal of information display Vol.9 No.4
We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from 460~660 nm (visible range), the off-state drain current (IDS_off) only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of ~3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination (λ=420nm) with different intensity was also investigated and IDS_off was found to increase with the light intensity. Throughout the study, the field-effect mobility (μeff) is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage (Vth) shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.
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Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors
Fung, Tze-Ching,Chuang, Chiao-Shun,Nomura, Kenji,Shieh, Han-Ping David,Hosono, Hideo,Kanicki, Jerzy The Korean Infomation Display Society 2008 Journal of information display Vol.9 No.4
We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from $460\sim660$ nm (visible range), the off-state drain current $(I_{DS_off})$ only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of $\sim$3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination ($\lambda$=420nm) with different intensity was also investigated and $I_{DS_off}$ was found to increase with the light intensity. Throughout the study, the field-effect mobility $(\mu_{eff})$ is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage $(V_{th})$ shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.
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