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Shinhyuk Yang,Jun Yong Bak,Sung-Min Yoon,Min Ki Ryu,Himchan Oh,Chi-Sun Hwang,Gi Heon Kim,Sang-Hee Ko Park,Jin Jang IEEE 2011 IEEE electron device letters Vol.32 No.12
<P>In-Ga-Zn-O thin-film transistors processed at 150°C on laminated polyethylene naphthalate substrates exhibit ing high electrical performances such as a saturation mobility of 24.26 cm<SUP>2</SUP>/(V · s), a subthreshold slope of 140 mV/dec, a turn-on voltage V<SUB>on</SUB> of -0.41 V, and an on-off ratio of 1.8 × 10<SUP>9</SUP> were fabricated. Cool-off-type adhesive was adopted to easily detach the plastic substrate from the carrier holder. Devices also showed highly uniform characteristics with a variation of 0.09 V in turn-on voltage. Stability characteristics under the positive gate bias stress can be enhanced by increasing the annealing time at 150°C.</P>
Shinhyuk Choi,이재길,Youngjin Kang,차호영,김형탁,Chun-Hyung Cho 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.4
A Au-free ohmic contact process for fabricating AlGaN/GaN heterostructure field-effect transistors(HFETs) on Si substrates was developed by using Mo-based metallization. We investigatedSi/Ti/Al/Mo metal stacks for ohmic metallization where the Ti/Al thickness ratio and the annealingtemperature were varied. The optimized metal stack and annealing conditions were a Si/Ti/Al/Mostack with 5/40/60/50 nm thicknesses and rapid thermal annealing in a N2 ambient at 900 C for30 sec, which resulted in a contact resistance of 1.24·mm, a sheet resistance of 410/sq and aspecific contact resistivity of 3.76 × 10−5·cm2. Devices fabricated using the optimized Mo-based,Au-free ohmic contact process exhibited comparable characteristics with higher breakdown voltageto those of devices fabricated using a conventional Au-based ohmic contact process.
Shinhyuk Yang,Doo-Hee Cho,Min Ki Ryu,Sang-Hee Ko Park,Chi-Sun Hwang,Jin Jang,Jae Kyeong Jeong IEEE 2010 IEEE electron device letters Vol.31 No.2
<P>We fabricated high-performance thin-film transistors (TFTs) with an amorphous-Al-Sn-Zn-In-O (a-AT-ZIO) channel deposited by cosputtering using a dual Al-Zn-O and In-Sn-O target. The fabricated AT-ZIO TFTs, which feature a bottom-gate and bottom-contact configuration, exhibited a high field-effect mobility of 31.9 cm<SUP>2</SUP>/V·s, an excellent subthreshold gate swing of 0.07 V/decade, and a high <I>I</I> <SUB>on/off</SUB> ratio of >10<SUP>9</SUP>, even below the process temperature of 250°C. In addition, we demonstrated that the temperature and bias-induced stability of the bottom-gate TFT structure can significantly be improved by adopting a suitable passivation layer of atomic-layer-deposition-derived Al<SUB>2</SUB>O<SUB>3</SUB> thin film.</P>
Shinhyuk Yang,Jeong-Ik Lee,Sang-Hee Ko Park,Woo-Seok Cheong,Doo-Hee Cho,Sung-Min Yoon,Chun-Won Byun,Chi-Sun Hwang,Hye-Yong Chu,Kyoung-Ik Cho,Taek Ahn,Yoojeong Choi,Mi Hye Yi,Jin Jang IEEE 2010 IEEE electron device letters Vol.31 No.5
<P>We fabricated environmentally stable and transparent organic/oxide hybrid transistor on a glass substrate using the conventional photolithography. The obtained device, which was composed of an In-Ga-Zn-O active layer/soluble polyimide (KSPI) organic insulator, showed a mobility of 6.65 cm<SUP>2</SUP>/Vs, a subthreshold swing slope of 350 mV/decade, a threshold voltage (<I>VT</I>) of 3.10 V, and an on-off ratio of 3.9 × 10<SUP>9</SUP>. The transistor also showed good uniformity characteristics and was found to be environmentally stable for 90 days under ambient conditions.</P>
윤식혁(Shinhyuk Yoon),조금남(Keumnam Cho) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.5
The present study investigated the performance evaluation of heat exchangers for heat pump evaporators under frosting conditions. The plate and slit fin-and-tube heat exchangers with a tube diameter of 7㎜ were used. The evaporator which was 400×252×12.7 ㎜ (H×W×D) was tested for two different types of plate fins and slit fins with the pitch of 1.5㎜. The experimental parameters were face velocity and number of rows. The pressure drop of the slit fin-and-tube heat exchanger was increased while the heat transfer rate was decreased as the frost increased. This is because as the frost clings to the slits, the enhancement of heat transfer of the slit fin-and-tube heat exchanger decreased due to the decrease of the leading edge effect and the mixing effect of air. From the flow and heat transfer characteristics, the HGR was considered as an index to evaluate the performance of the heat exchanger. The HGR was over 1 under frosting conditions and it was concluded that it was a proper index for the capacity of the heat exchanger.
히트펌프 조건시 휜-관 열교환기의 휜 부분의 착상에 관한 연구
윤신혁(Shinhyuk Yoon),조금남(Keumnam Cho),하야세 가쿠(Gaku Hayase) 대한기계학회 2009 대한기계학회 춘추학술대회 Vol.2009 No.11
The present study measured the frost thickness and frost mass on a flat plate to propose the correlation equations for the local and average frost thickness, frost density, and frost mass. Key parameters were the cooling surface temperature, absolute humidity of air, air temperature, and air velocity. A 50% ethylene glycol aqueous solution was applied as a coolant. The present study also measured the local frost thickness on a fin-tube model to compare the predicted values on the fin of the fin-tube model by the correlation equations from the experiments of the flat plate. The empirical correlations under the heat pump condition in the present study might predict more accurately than the other correlations. The proposed correlation for the frost thickness agreed with the measured data within 5%.