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High Voltage Marx Generator Implementation using IGBT Stacks
Jong-Hyun Kim,Byung-Duk Min,Shenderey, S.,Geun-Hie Rim IEEE 2007 IEEE transactions on dielectrics and electrical in Vol.14 No.4
<P>High voltage Marx generator implementation using IGBT (Insulated Gate Bipolar Transistor) stacks is proposed in this paper. To protect the Marx generator at the moment of breakdown, AOCP (Active Over-Current Protection) part is included. The Marx generator is composed of 12 stages and each stage is made of IGBT stacks, two diode stacks, and capacitors. IGBT stack is used as a single switch. Diode stacks and inductors are used to charge the high voltage capacitor at each stage without power loss. These are also used to isolate input and high voltage negative output in high voltage generation mode. The proposed Marx generator implementation uses IGBT stack with a simple driver and has modular design. This system structure gives compactness and easiness to implement the total system. Some experimental and simulated results are included to verify the system performances in this paper.</P>
High Voltage Pulsed Power Supply Using IGBT Stacks
Jong-Hyun Kim,Byung-Duk Min,Shenderey, S.V.,Geun-Hie Rim Institute of Electrical and Electronic Engineers 2007 IEEE transactions on dielectrics and electrical in Vol.14 No.4
<P>High voltage pulsed power supply using IGBT (insulated gate bipolar transistor) stacks and pulse transformer for plasma source ion implantation is proposed. To increase voltage rating, twelve IGBTs are used in series at each IGBT stack and a step-up pulse transformer is utilized. To increase the current rating, the proposed system makes use of synchronized three pulse generator modules composed of diodes, capacitors and IGBT stacks. The proposed pulsed power supply uses semiconductor switches as main switches. Hence, the system is compact, and has semi-infinite lifetime. In addition, it has high flexibility in parameters such as voltage magnitude (10-60 kV), pulse repetition rate (PRR) (10-2000 pps), and pulse width (2-5 muS).</P>
임펄스 발생기의 회로 설계 파라미터 예측계산과 10/350 ㎲ 뇌임펄스 전류발생기 적용
李在福(Jae-Bok Lee),S. V. Shenderey,張錫勳(Sug-Hun Chang),明聖鎬(Sung-Ho Myung),趙延奎(Yuen-Gue Cho) 대한전기학회 2008 전기학회논문지 Vol.57 No.10
This paper presents design parameter calculation methodology and its realization to construction for the 10/350㎲ lightning impulse current generator(ICG) modelled as double exponential function waveform with characteristic parameters α, β. Matlab internal function. "fzero" was applied to find λ=α/β which is solution of nonlinear equation linearly related with two wave parameter T₁ and T₂. The calculation results for 10/350 ㎲ lightning impulse current show very good accuracy with error less 0.03 %. Two type of 10/350 ㎲ ICGs based on the calculated design circuit parameters were fabricated by considering the load variation. One is applicable to the MOV based Surge protective device(SPD) for less 15 ㎄ and the other is to test small resistive devices such as spark gap arrester and bonding device with maximum current capability 30 ㎄. The tested waveforms show error within 10 % in comparison with the designed estimation and the waveform tolerance recommended in the IEC 61643-1 and IEC 60060-1.
Choi, Seung-Kyu,Kang, Sung-Man,Lee, Jae-Bok,Shenderey, S. V.,Jung, Hyun-Hak,Jung, Jun-Young,Kim, Ho-Dong American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.12
<P>This paper deal with the surge energy capability of ZnO-based varistors according to the Sb2O3 and Bi2O3. For the purpose of surge test for the class 1 grade. The direct lightning current (10/350 mu S) with high energy injected to the sample varistor. The thermal conductivity and the electrical properties, such as the nonlinear coefficient, leakage current, varistor voltage and dielectric constant were investigated. Among these, the thermal conductivity had a proportional correlation with the energy surge withstanding capability. Five ZnO varistors were prepared with varied compositions (the Bi/Sb ratio was set at 1/2), but the other processes that were conducted were the same, such as sintering, milling, and pressing. As a result, the energy capacity of the ZnO varistor was found to have a strong correlation with the microstructure. FESEM was used to observe the microstructure of the ZnO varistor.</P>
비선형 부하를 고려한 감쇠 진동형 임펄스 전류발생기의 설계 기법
張錫勳(Sug-Hun Chang),李在福(Jae-Bok Lee),S. V. Shenderey,明聖鎬(Sung-Ho Myung),趙延奎(Yuen-Gue Cho) 대한전기학회 2008 전기학회논문지 Vol.57 No.12
This paper presents a design parameter calculation methodology and its realization to construction for the damped oscillatory impulse current generator(ICG) modelled as damping factor α. Matlab internal functions, "fzero" and "polyfit" are applied to find α which are solutions of second order nonlinear equation related with three wave parameters T₁, T₂ and Ios. The calculation results for standard impulse current waveforms such as 4/10 ㎲, 8/20 ㎲ and 30/80 ㎲ show very good accuracy and this results make it possible to extend to generalization in the design of damped oscillatory ICG with any capacitor. 8/20 ㎲ ICG based on the calculated design circuit parameters is fabricated in consideration of the nonlinear load(MOV) variation. Comparisons of the tested waveforms with the designed estimation show error within 10% for the waveform tolerance recommended in IEC 60060-1 and IEEE std. C62.45.
김종현(J. H. Kim),류명효(M. Y. Ryu),센드레이(S. Shenderey),김종수(J. S. Kim),임근희(G. H. Rim) 전력전자학회 2004 전력전자학술대회 논문집 Vol.- No.-
본 논문은 반도체 스위치를 이용한 고압 펄스 발생기에 관한 연구이다. PSII (Plasma Source Ion Implantation)의 전원 장치로 사용되었으며, 기존의 hard switch나 싸이로트론 등을 이용한 고압 펄스파워 발생기에 비해 다음과 같은 장점을 가진다. 장수명, 고효율과 펄스 크기, 반복률, 펄스폭 등의 조정이 자유로운 높은 유연성 등의 장점이다. 또한 제안된 펄스 발생기에서 사용된 반도체 스위치는 12개의 IGBT가 직렬로 연결되어 있으며, 그 중 하나의 스위치만 능동 구동기 두개가 존재하고 나머지 스위치는 수동 구동기만으로 구성되어 있어, 구동기가 매우 간단한 장점을 가지고 있다.
김종현(JH.Kim),류명효(M.Y.Ryu),정인화(I.W.Jung),S.Shenderey,김종수(J.S.Kim),임근희(G.H.Rim) 전력전자학회 2003 전력전자학술대회 논문집 Vol.2003 No.7(1)
A semiconductor switch-based fast bi-polar high voltage pulse generator is proposed In This paper. The proposed pulse system is made of a thyristor based-rectifier, DC link capacitor, a push-pull resonant Inverter, a high voltage transformer, secondary capacitor, a high voltage IGBT & diode stacks, and a variable capacitor. The proposed system makes bi-polar high voltage sinusoidal waveform using resonance between leakage inductance of the transformer and secondary capacitor and transfers energy to output load at maximum of the secondary capacitor voltage Compared to previous bi-polar high voltage pulse power supply using nonlinear transmission line, the proposed pulse power system Using only semiconductor switches has simple structure and gives high efficiency
Powerelectonics for Pulsed Power Technology in KERI
Geun-hie Rim,E.P. Pavlov,Hong-Sik Lee,Jong-Soo Kim,Youn-Sik Jin,Ju-Won Baek,S.V. Shenderey,Dong-Wook Yoo,G.I. Gusev,S.A. Nikiforov,Young-Hoon Jung,In-Wha Jeong,Young-Wook Choi,Jong-Hyun Kim 전력전자학회 2004 ICPE(ISPE)논문집 Vol.- No.-
This paper reviews the R&D results achieved in Korea<br/> Electrotechnology Research Institute (KERI) in a decade or so. KERI has developed pulsed power technology and its applications mostly based on power electronics. KERI’s R&D activity covers components, military systems, and industry applications.<br/> <br/> High voltage switching means developed in KERI are a rotary arc gap switch (11kV, 400kAp), a vacuum rotary arc gap (20kV, 150kAp), an inverse pinch switch (20kV, 150kAp), and 10kV semiconductor switch stacks made of thyristors and IGBTs. The IGBT and thyristor stacks consists of from ten to twelve 1.2kV discrete devices and<br/> are operated by only one active circuit located in the ground side. Some ferromagnetic opening switch schemes are also researched on trial bases. <br/> <br/> KERI has developed several pulsed power supplies responding to industry needs, of which applications are electrostatic precipitators, high voltage capacitor chargers, polluted gas treatment systems. The investigated pulsed power applications are rock fragmentation system, plasma ion implantation (PSII), food process, and fine metal powder fabrication system using wire-exploding process.