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Ge-on-Si Photodetector with Enhanced Optical Responsivity by Advanced Metallization Geometry
Seongjae Cho,Stanley S. Cheung,Yung Hun Jung,Sae-Kyoung Kang,Dal Ho Lee,Byung-Gook Park 대한전자공학회 2020 Journal of semiconductor technology and science Vol.20 No.4
In this study, a 1550-nm Ge-on-Si photodetector coupled with a Si waveguide on silicon-on-insulator (SOI) platform has been fabricated and characterized with a particular emphasis on the back-end-of-the-line (BEOL) process. A comparison study of the effects of different metallization schemes on the responsivity has been conducted. Compared to the photodetector with a bulk metal contact, those with single-layered and double-layered contact-hole arrays demonstrated improvements in the optical responsivity at an operating voltage of 1 V. Especially, double-layer scheme showed prominent increase in photon-induced current without significant increase in dark current.
C. S. Peirce on First, Feeling, and Consciousness
Seongjae Kim 고려대학교 응용문화연구소 2013 에피스테메 Vol.0 No.10
Peirce’s rhematic iconic qualisign challenges the community of Peirce scholars in mainly three ways: First, ontologically, it merely exists as a pure possibility. Second, epistemologically, it is never perceived as itself, but it must always be embodied in a sinsign. Third, it seems impossible for a researcher to communicate a scientific research about it. This paper tries to overcome these difficulties by suggesting a possible case of the rhematic iconic qualisign; the humming sound of pianist Glenn Gould. Peirce’s definition of the First in its relation to feeling and consciousness is provided as the theoretical ground of this case study. The dominance of the First in Gould’s humming sound gives rise to a conclusion that music’s essence is its firstness, namely the quality of feeling.
RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs
Seongjae Cho,Kyung Rok Kim,Byung-Gook Park,In Man Kang IEEE 2011 IEEE transactions on electron devices Vol.58 No.5
<P>This paper presents a radio-frequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) using a 3-D device simulator. JLSNW MOSFETs are evaluated for various RF parameters such as cutoff frequency <I>fT</I>, gate input capacitance, distributed channel resistances, transport time delay, and capacitance by the drain-induced barrier lowering effect. Direct comparisons of high-frequency performances and extracted parameters are made with conventional silicon nanowire MOSFETs. A non-quasi-static RF model has been used, along with SPICE to simulate JLSNW MOSFETs with RF parameters extracted from 3-D-simulated <I>Y</I>-parameters. The results show excellent agreements with the 3-D-simulated results up to the high frequency of <I>fT</I>.</P>
( Seongjae Kim ),( Hyeoung-eun Kim ),( Boyeon Kang ),( Youn-woo Lee ),( Hangeun Kim ),( Dae Kyun Chung ) 한국미생물생명공학회(구 한국산업미생물학회) 2017 Journal of microbiology and biotechnology Vol.27 No.10
Lipoteichoic acid (LTA), a cell wall component of gram-positive bacteria, is recognized by Toll-like receptor 2, expressed on certain mammalian cell surfaces, initiating signaling cascades that include nuclear factor kappa-light-chain-enhancer of activated B cells (NF-κB) and mitogen-activated protein kinase. There are many structural and functional varieties of LTA, which vary according to the different species of gram-positive bacteria that produce them. In this study, we examined whether LTA isolated from Staphylococcus aureus (aLTA) affects the expression of junction proteins in keratinocytes. In HaCaT cells, tight junctionrelated gene expression was not affected by aLTA, whereas adherens junction-related gene expression was modified. High doses of aLTA induced the phosphorylation of extracellular signal-regulated protein kinases 1 and 2, which in turn induced the epithelial-mesenchymal transition (EMT) of HaCaT cells. When cells were given a low dose of aLTA, however, NF-κB was activated and the total cell population increased. Taken together, our study suggests that LTA from S. aureus infections in the skin may contribute both to the outbreak of EMT-mediated carcinogenesis and to the genesis of wound healing in a dose-dependent manner.
A Charge Trap Folded nand Flash Memory Device With Band-Gap-Engineered Storage Node
Seongjae Cho,Won Bo Shim,Yoon Kim,Jang-Gn Yun,Jong Duk Lee,Hyungcheol Shin,Jong-Ho Lee,Byung-Gook Park IEEE 2011 IEEE transactions on electron devices Vol.58 No.2
<P>A charge trap folded NAND (FNAND) Flash memory device with band-gap-engineered (BE) storage node is proposed. Because of the compact cell layout without junction contacts, a NAND Flash memory is the most suitable memory medium for electronic appliances. Two memory cells are put together to have a common vertical channel, which enables one to achieve a theoretical near-30-nm technology. The resulting array is made by folding the conventional 2-D Flash memory and is called FNAND. The memory storage node uses a BE stack structure, where the oxide-nitride-oxide multilayers replace the tunnel oxide. The fin structures for both wordline and bitline have been formed by sidewall spacer patterning, instead of photolithography. The fabrication processes for SONONOS NAND Flash memory having independent double gates are explained. Electrical characteristics regarding memory operations under paired cell interference are analyzed.</P>
Seongjae Cho,Byung-Gook Park IEEE 2011 IEEE transactions on electron devices Vol.58 No.8
<P>In this brief, an advanced sensing scheme for ultrathin-body vertical Flash memory device is introduced experimentally. Without an increment in the number of read operations, the program/erase states of a memory cell can be identified exactly even with the existence of electrical interference between cells having an ultrathin vertical channel in common. The novel sensing scheme, i.e., the double sensing per 2 bits method, was validated for a fabricated device with a channel thickness of 80 nm. The proposed method can be also used as reference for establishing a smart sensing scheme for multilevel cell NAND Flash memory devices.</P>