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<tex> $C$</tex>– <tex> $V$</tex> Characteristics in Undoped Gate-All-Around Nanowire FET Array
Rock-Hyun Baek,Chang-Ki Baek,Sang-Hyun Lee,Sung Dae Suk,Ming Li,Yun Young Yeoh,Kyoung Hwan Yeo,Dong-Won Kim,Jeong-Soo Lee,Kim, D M,Yoon-Ha Jeong IEEE 2011 IEEE electron device letters Vol.32 No.2
<P>Presented in this letter are the <I>C</I>-<I>V</I> data, measured from nanowire capacitors, which have been fabricated by connecting in parallel a large number of identically processed nanowire FETs. The <I>C</I>-<I>V</I> curves were examined over a range from accumulation to inversion with varying frequencies and at different electrode configurations. The gate response of the undoped and floating channel is investigated using <I>C</I>-<I>V</I> data, and the inversion charge and carrier mobility are accurately extracted by eliminating the effects of parasitic capacitances and series resistance <I>R</I><SUB>sd</SUB>. These observed data are compared with the data from planar MOS capacitor.</P>
Rock-Hyun Baek,Chang-Ki Baek,Sung-Woo Jung,Yun Young Yeoh,Dong-Won Kim,Jeong-Soo Lee,Kim, D.M.,Yoon-Ha Jeong IEEE 2010 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.9 No.2
<P>The series resistance, <I>R</I> <SUB>sd</SUB> in silicon nanowire FETs (Si-NWFET) is extracted unambiguously, using the <I>Y</I> -function technique, in conjunction with the drain current and transconductance data. The volume channel inversion in Si-NWFET renders the charge carriers relatively free of the surface scattering and concomitant degradation of mobility. As a result, the <I>Y</I> -function of Si-NWFET is shown to exhibit a linear behavior in strong inversion, thereby enabling accurate extraction of <I>R</I> <SUB>sd</SUB>. The technique is applied to nanowire devices with channel lengths 82, 86, 96, 106, 132, and 164 nm, respectively. The extracted <I>R</I> <SUB>sd</SUB> values are shown nearly flat with respect to the gate voltage, as expected from Ohmic contacts but showed a large variation for all channel lengths examined. This indicates the process parameters involved in the formation of series contacts vary considerably from device to device. The present method only requires a single device for extraction of <I>R</I> <SUB>sd</SUB> and the iteration procedure for data fitting is fast and stable.</P>
Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric
Hyun-Sik Choi,Seung-Ho Hong,Rock-Hyun Baek,Kyong-Taek Lee,Chang-Yong Kang,Jammy, R.,Byoung-Hun Lee,Sung-Woo Jung,Yoon-Ha Jeong IEEE 2009 IEEE electron device letters Vol.30 No.5
<P>Low-frequency noise (LFN) after channel soft oxide breakdown (SBD) of n-MOSFETs with a HfLaSiO gate dielectric and TaN metal gate shows a Lorentzian-like spectrum, which is not observed in HfSiO gate dielectric devices after channel SBD. This is related to the spatial location of the SBD spot. Because La weakens atomic bonding in the interface layer, the SBD spot is generated close to the Si/SiO<SUB>2</SUB> interface. This is verified by using time domain analysis. To examine the property of this Lorentzian-like noise, LFNs after channel SBD are measured repeatedly after arbitrary times. After about 20 h, LFN finally shows an increase only at the low-frequency part of the noise spectrum (f < 1 kHz). These results suggest that the trap distribution after arbitrary times spreads instead of remaining localized. Therefore, the traps or the La-O defect clusters have severe unstable distribution and induce an increase of the localized field, which, in turn, causes the traps to percolate through the high-k dielectric.</P>
Rock-Hyun Baek,Chang-Ki Baek,Hyun-Sik Choi,Jeong-Soo Lee,Yun Young Yeoh,Kyoung Hwan Yeo,Dong-Won Kim,Kinam Kim,Kim, D M,Yoon-Ha Jeong IEEE 2011 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.10 No.3
<P>In this paper, the volume trap densities <I>Nt</I> are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting <I>Nt</I>, the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/<I>f</I> curve. Also, effective mobility and threshold voltage were simultaneously extracted with the series resistance to characterize the 1/<I>f</I> noise in terms of intrinsic values of these two channel parameters. The volume trap densities thus extracted from different oxides (in situ steam-generated oxide/rapid thermal oxide/nitride-gated oxide) are compared and further examined using hot-carrier stress data. Finally, radius dependence of the cylindrical 1/<I>f</I> model developed is discussed.</P>
한국 대중음악에서의 전자악기 수용 연구 -1970년대부터 1980년대 초까지의 사례를 중심으로-
권현우 ( Hyun Woo Kwon ),박재록 ( Jae Rock Park ) 민족음악학회 2016 음악과 민족 Vol.51 No.-
A variety of musical experiments and tests were conducted on the popular music genres in Korea in the 1970s-80s. This article focuses, in particular, on the introduction and use of electronic instruments in the development of popular music of that time. The use of electronic instruments in the popular music introduced numerous new musical genres to the Korean popular music industry such as folk, progressive rock, and funky disco. Meanwhile, it also paved the way for the development of ballad and dance music, which eventually became the two pillars of Korean popular music. In particular, the subsequent merger of the dance music with techno contributed significantly to the advent of the new generation of Korean popular music in the 1990s. In the study of Korean popular music and to understand its past, present and future, it is imperative to adopt a new perspective that is different from the existing approaches to analyze the genre, generation, lyrics and music of the time. In addition to adopting a new perspective, this study highlights the past of Korean popular music by way of in-depth historical research and reflects on the present development of the same. Thereafter, it suggests a possible path of development for the continued evolution of popular music in Korea.
최락현(Rock-Hyun Choi),홍원기(Won-Kee Hong) 한국산업정보학회 2010 한국산업정보학회논문지 Vol.15 No.3
네트워크 리프로그래밍은 센서 필드에 배치된 센서 노드들의 효율적인 유지 보수를 위해 코드 업데이트와 오류 수정을 원격으로 수행할 수 있도록 하는 기술이다. 센서 노드들 간에 소량의 데이터를 전달하는 일반적인 무선 센서 네트워크 통신과는 달리 네트워크 리프로그래밍에서는 대용량 데이터의 신뢰성 있는 전달이 요구된다. 기존의 네트워크 리프로그래밍 기법은 신뢰성 있는 데이터 전달을 위해 데이터 손실 발생 시 복구를 위한 비용이 많이 들며 이로 인한 에너지 소모가 급증하는 문제점을 안고 있다. 본 논문에서는 센서 네트워크에 적합한 클러스터 기반의 리프로그래밍 기법을 제안한다. 센서 필드를 클러스터로 나누고 각 클러스터에 대표 노드를 선정하여 중복 전송과 불필요한 경쟁을 최소화함으로써 에너지 소모를 줄인다. 또한 테이블을 이용하여 노드들의 상태 정보를 통해 정확한 오류 복구를 수행함으로써 신뢰성을 높이고 있다. Network reprogramming is a technology that allows several sensor nodes deployed in sensor field to be repaired remotely. Unlike general communication in sensor network where small amount of data is transferred, network reprogramming requires reliable transfer of large amount of data. The existing network reprogramming techniques suffers high cost and large energy consumption to recover data loss in node communication. In this paper, a cluster based network reporgramming scheme is proposed for sensor network. It divides sensor field into several clusters and chooses a cluster header in charge of data relay to minimize duplicated transmission and unnecessary competition. It increases reliability by effective error recovery through status table.
신락현(Rock-Hyun Shin) 한국멀티미디어학회 2008 한국멀티미디어학회 학술발표논문집 Vol.2008 No.2
본 논문은 공간의 크기와 잔향의 주파수 응답특성을 고려한 범용의 다양한 음향효과기의 응용을 제안한다. 제안하는 방법은 콘서트 홀 에서 공간의 크기가 증가하면 잔향의 길이는 길어지고 잔향의 주파수 응답특성은 고주파수대가 감소되는 형태를 가지게 된다. 본 논문에서는 이러한 잔향의 특성을 고려하여 설계한 간단한 잔향기의 알고리즘을 기본으로 다양한 음향효과가의 응용방법을 제안하고자 하였다. 최근 휴대용 음향기가와 같은 적은 메모리와 실시간 처리 그리고 낮은 소비전력을 요하는 환경에 적합한 음향효과 기기들이 개발되고 있는 시점에서 본 논문에서는 적은 차수의 시간지연을 이용하여 잔향기를 구성하고 그 잔향기에서 다른 음향효과 기들을 구성하는 방법들을 제시하고자 한다. 본 논문에서 제시한 음향효과기들이 간단하면서도 음향의 특성을 만족하며 우수한 성능을 보임을 평가를 통해 확인하였다.