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Quanxi Wang,Baocheng Wu,Mengxi Liu,Xiaoqin Yuan,Chunyan Li,Shiyi Chen,Yubin Zhuang,Yijian Wu,Yifan Huang 한국유전학회 2017 Genes & Genomics Vol.39 No.11
This study was to investigate the molecular mechanism underlying the apoptosis induced by Muscovy duck reovirus (MDRV) through a transcriptomic analysis. Muscovy ducklings were infected with MDRV strain YB and the apoptotic cells in their livers were examined with terminal-deoxynucleotidyl-transferase-mediated nick end labeling and flow cytometry. Genes differentially expressed in the livers of the MDRV-infected ducklings were screened by comparing them with those of uninfected ducklings and were analyzed with a transcriptomic method to illuminate the mechanism of MDRV infection. The results showed that MDRV infection strongly induced apoptotic cells in liver. Significant pathway enrichment determined by a Kyoto Encyclopedia of Genes and Genomes analysis showed that MDRV activated the death receptor family signaling pathway (Fas, TNFR1), the interleukin receptor signaling pathway (IL1, IL3), the phosphatidylinositol 3-kinase signaling pathway, NF-ҝB signaling pathway and calcium ions signaling pathway to induce apoptosis. This was verified by SYBR-Green-based fluorescence quantitative PCR. In conclusion, MDRV induce apoptosis by activation multi signaling pathways.
A Fixed-time Distributed Algorithm for Least Square Solutions of Linear Equations
Shuling Li,Wu Ai,Jian Wu,Quanxi Feng 제어·로봇·시스템학회 2021 International Journal of Control, Automation, and Vol.19 No.3
This study presents a fixed-time convergent algorithm to achieve distributed least square (DLS) solutions of networked linear equations. Each agent in the network only knows a subset of the equations and can only exchange messages with its nearest neighbors. Unlike finite-time counterparts, the settling time of the fixed-time distributed algorithm does not depend upon the initial states, and can be preassigned according to the requirements of the task. Numerical simulations verify the theoretical results.
Pressure-induced dramatic changes in organic–inorganic halide perovskites
Lü,, Xujie,Yang, Wenge,Jia, Quanxi,Xu, Hongwu Royal Society of Chemistry 2017 Chemical Science Vol.8 No.10
<▼1><P>We summarise cutting-edge discoveries and provide insights into the important theme of halide perovskites using pressure as a tuning tool.</P></▼1><▼2><P>Organic–inorganic halide perovskites have emerged as a promising family of functional materials for advanced photovoltaic and optoelectronic applications with high performances and low costs. Various chemical methods and processing approaches have been employed to modify the compositions, structures, morphologies, and electronic properties of hybrid perovskites. However, challenges still remain in terms of their stability, the use of environmentally unfriendly chemicals, and the lack of an insightful understanding into structure–property relationships. Alternatively, pressure, a fundamental thermodynamic parameter that can significantly alter the atomic and electronic structures of functional materials, has been widely utilized to further our understanding of structure–property relationships, and also to enable emergent or enhanced properties of given materials. In this perspective, we describe the recent progress of high-pressure research on hybrid perovskites, particularly regarding pressure-induced novel phenomena and pressure-enhanced properties. We discuss the effect of pressure on structures and properties, their relationships and the underlying mechanisms. Finally, we give an outlook on future research avenues in which high pressure and related alternative methods such as chemical tailoring and interfacial engineering may lead to novel hybrid perovskites uniquely suited for high-performance energy applications.</P></▼2>
A Review of Epitaxial Metal-Nitride Films by Polymer-Assisted Deposition
Hongmei Luo,Haiyan Wang,Guifu Zou,Eve Bauer,Thomas M. McCleskey,Anthony K. Burrell,Quanxi Jia 한국전기전자재료학회 2010 Transactions on Electrical and Electronic Material Vol.11 No.2
Polymer-assisted deposition is a chemical solution route to high quality thin films. In this process, the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of crack-free and uniform films after thermal treatment. We review our recent effort to epitaxially grow metal-nitride thin films, such as hexagonal GaN, cubic TiN, AlN, NbN, and VN, mixed-nitride Ti1-xAlxN, ternary nitrides tetragonal SrTiN2, BaZrN2, and BaHfN2, hexagonal FeMoN2, and nanocomposite TiN-BaZrN2.
A Review of Epitaxial Metal-Nitride Films by Polymer-Assisted Deposition
Luo, Hongmei,Wang, Haiyan,Zou, Guifu,Bauer, Eve,Mccleskey, Thomas M.,Burrell, Anthony K.,Jia, Quanxi The Korean Institute of Electrical and Electronic 2010 Transactions on Electrical and Electronic Material Vol.11 No.2
Polymer-assisted deposition is a chemical solution route to high quality thin films. In this process, the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of crack-free and uniform films after thermal treatment. We review our recent effort to epitaxially grow metal-nitride thin films, such as hexagonal GaN, cubic TiN, AlN, NbN, and VN, mixed-nitride $Ti_{1-x}Al_xN$, ternary nitrides tetragonal $SrTiN_2$, $BaZrN_2$, and $BaHfN_2$, hexagonal $FeMoN_2$, and nanocomposite TiN-$BaZrN_2$.
Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires
Li, Zhen,Xu, Enzhi,Losovyj, Yaroslav,Li, Nan,Chen, Aiping,Swartzentruber, Brian,Sinitsyn, Nikolai,Yoo, Jinkyoung,Jia, Quanxi,Zhang, Shixiong The Royal Society of Chemistry 2017 Nanoscale Vol.9 No.35
<P>The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is assisted by Au catalysts, and their morphologies vary as a function of substrate position and temperature. Transmission electron microscopy characterization reveals the formation of an amorphous surface in single crystalline nanowires. X-ray photoelectron spectroscopy studies suggest that the nanowire surface is composed of In2O3, SnO2, Te and TeO2which can be readily removed by argon ion sputtering. Exposure of the cleaned nanowires to atmosphere leads to rapid oxidation of the surface within only one minute. Characterization of electrical conductivity<I>σ</I>, thermopower<I>S</I>, and thermal conductivity<I>κ</I>was performed on the same In-doped nanowire which shows suppressed<I>σ</I>and<I>κ</I>but enhanced<I>S</I>yielding an improved thermoelectric figure of merit<I>ZT</I>compared to the undoped SnTe.</P>
Lee, Sangik,Yoon, Chansoo,Lee, Ji Hye,Kim, Yeon Soo,Lee, Mi Jung,Kim, Wondong,Baik, Jaeyoon,Jia, Quanxi,Park, Bae Ho American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.22
<P>Two-dimensional (2D)-layered semiconducting materials with considerable band gaps are emerging as a new class of materials applicable to next-generation devices. Particularly, black phosphorus (BP) is considered to be very promising for next-generation 2D electrical and optical devices because of its high carrier mobility of 200-1000 cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP> and large on/off ratio of 10<SUP>4</SUP> to 10<SUP>5</SUP> in field-effect transistors (FETs). However, its environmental instability in air requires fabrication processes in a glovebox filled with nitrogen or argon gas followed by encapsulation, passivation, and chemical functionalization of BP. Here, we report a new method for reduction of BP-channel devices fabricated without the use of a glovebox by galvanic corrosion of an Al overlayer. The reduction of BP induced by an anodic oxidation of Al overlayer is demonstrated through surface characterization of BP using atomic force microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy along with electrical measurement of a BP-channel FET. After the deposition of an Al overlayer, the FET device shows a significantly enhanced performance, including restoration of ambipolar transport, high carrier mobility of 220 cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP>, low subthreshold swing of 0.73 V/decade, and low interface trap density of 7.8 × 10<SUP>11</SUP> cm<SUP>-2</SUP> eV<SUP>-1</SUP>. These improvements are attributed to both the reduction of the BP channel and the formation of an Al<SUB>2</SUB>O<SUB>3</SUB> interfacial layer resulting in a high-<I>k</I> screening effect. Moreover, ambipolar behavior of our BP-channel FET device combined with charge-trap behavior can be utilized for implementing reconfigurable memory and neuromorphic computing applications. Our study offers a simple device fabrication process for BP-channel FETs with high performance using galvanic oxidation of Al overlayers.</P> [FIG OMISSION]</BR>
Lee, Jang‐,Sik,Kim, Yong‐,Mu,Kwon, Jeong‐,Hwa,Sim, Jae Sung,Shin, Hyunjung,Sohn, Byeong‐,Hyeok,Jia, Quanxi WILEY‐VCH Verlag 2011 Advanced Materials Vol.23 No.18
<P><B>Multiple data storage memory devices based on the controlled capacitive coupling of trapped electrons</B> are fabricated using highly ordered arrays of metal nanoparticles. Results are presented from metal nanoparticle‐based memory devices with controlled nanoparticle charge trapping elements, which undergo gate‐voltage‐adjustable multilevel memory states. Experimental and theoretical analysis for multilevel data manipulations and visualization of memory states are done on the nanometer scale. </P>
Liang, Weizheng,Gao, Min,Lu, Chang,Zhang, Zhi,Chan, Cheuk Ho,Zhuge, Lanjian,Dai, Jiyan,Yang, Hao,Chen, Chonglin,Park, Bae Ho,Jia, Quanxi,Lin, Yuan American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.9
<P>Vanadium dioxide (VO<SUB>2</SUB>) is a strong-correlated metal-oxide with a sharp metal-insulator transition (MIT) for a range of applications. However, synthesizing epitaxial VO<SUB>2</SUB> films with desired properties has been a challenge because of the difficulty in controlling the oxygen stoichiometry of VO<SUB><I>x</I></SUB>, where <I>x</I> can be in the range of 1 < <I>x</I> < 2.5 and V has multiple valence states. Herein, a unique moisture-assisted chemical solution approach has been developed to successfully manipulate the oxygen stoichiometry, to significantly broaden the growth window, and to significantly enhance the MIT performance of VO<SUB>2</SUB> films. The obvious broadening of the growth window of stoichiometric VO<SUB>2</SUB> thin films, from 4 to 36 °C, is ascribed to a self-adjusted process for oxygen partial pressure at different temperatures by introducing moisture. A resistance change as large as 4 orders of magnitude has been achieved in VO<SUB>2</SUB> thin films with a sharp transition width of less than 1 °C. The much enhanced MIT properties can be attributed to the higher and more uniform oxygen stoichiometry. This technique is not only scientifically interesting but also technologically important for fabricating wafer-scaled VO<SUB>2</SUB> films with uniform properties for practical device applications.</P> [FIG OMISSION]</BR>