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Growth and Characterization of Pulse Electrodeposited CuInSe2 Thin Films
Dixit Prasher,Poolla Rajaram 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.5
CuInSe2 thin films were grown on SnO2-coated glass substrates using the pulse electrodeposition (PED) technique. The CuInSe2 films were grown at different potentials using pulses of different frequencies ranging from 1 KHz to 1 MHz. The electrodeposited films were annealed in vacuum at 300°C, for 1 hr, to improve the crystallinity. The annealed films were characterized by x-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Analysis of x-rays (EDAX), and UV-VIS-NIR spectra. The results show that the electrodeposited CuInSe2 films have good stoichiometry and are single phase with an optical gap around 1 eV. SEM studies show that the films grown using pulses of frequency 1 KHz contain nanoparticles of size 50-60 nm, whereas those grown using pulses of frequency 100 KHz and 1 MHz contain micronsized particles.
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Urvashi Verma,Vikas Thakur,Poolla Rajaram,A. K. Shrivastava 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.1
A series of nanocrystalline thin films of cadmium zinc sulphide(Cd1-xZnxS) solid solution were deposited on glass substrates usingspray pyrolysis. Cadmium chloride (CdCl2), zinc chloride (ZnCl2) andthiourea (NH2CSNH2) were used as the sources of Cd, Zn and Srespectively. The films were characterized using structural, morphologicaland optical techniques. X-ray diffraction (XRD) studies show thatthe films of Cd1-xZnxS are polycrystalline and single phase having thewurtzite structure. The crystallites in the thin films of pure CdS possesspreferred crystallographic orientation along the <002> direction. Thepreferred orientation of crystallites in the Cd1-xZnxS films changes from<002> to <101> with increase in Zn concentration. The latticeparameters of Cd1-xZnxS decrease with increase in Zn concentration. Scanning electron microscopy (SEM) and atomic force microscopy(AFM) studies show that the surfaces of the films are smooth and areuniformly covered with nanoparticles. Energy dispersive analysis of xrays(EDAX) results reveal that the grown films have goodstoichiometry. Optical transmission spectra confirm the good qualityof the Cd1-xZnxS films.
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Bandedge Emission in Sprayed ZnO Thin Films
Vikas Thakur,Udai Pratap Verma,Rajaram Poolla 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.6
ZnO thin films were grown by spraying aqueous solutions of zinc acetate on quartz and silicon substrates heated to 500°C. X-ray diffraction (XRD) studies show that the ZnO films crystallize in the hexagonal phase and are highly oriented along the [002] direction. SEM micrographs show that the surface of the films is uniformly covered with worm shaped particles. EDAX results together with XRD studies confirm that the synthesized films are single phase ZnO with good stoichiometry. The sharp absorption occurring near the band edge indicates high quality growth of the material. Room temperature photoluminescence (PL) studies of the sprayed films show a strong near band edge (NBE) emission. PL spectra obtained at low temperature (20 K) exhibit better resolved peaks of the NBE emission caused by the radiative recombination of free and bound excitons. The dominant free exciton emission observed in the PL spectra confirms the high quality of the sprayed ZnO layers.
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