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- 저자 : Po-Tsun (검색결과 2 건)
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Probing Insulator-quantum Hall Transitions by Current Heating
Kuang Yao Chen,N. Aoki,Y. Ochiai,K. A. Cheng,Li-Hung Lin,C. F. Huang,Yu-Ru Li,Yen Shung Tseng,Chun-Kai Yang,Po-Tsun Lin,Jau-Yang Wu,Sheng-Di Lin,C.-T. Liang 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
We report a magneto-transport study on the two-dimensional electron system (2DES) in an Al- GaAs/GaAs heterostructure. The direct insulator to quantum Hall conductor transition is observed at low temperatures by increasing the magnetic field B perpendicular to the 2DES. We can also observe the transition by varying the current I and find a relation Te~Ia between electron effective temperature Te and current. Here, a denotes the exponent for the power law. The exponent a, however, can have different values on the two sides of the transition point, which indicates different inelastic scattering mechanisms in the low-field insulator and in the quantum Hall conductor. We report a magneto-transport study on the two-dimensional electron system (2DES) in an Al- GaAs/GaAs heterostructure. The direct insulator to quantum Hall conductor transition is observed at low temperatures by increasing the magnetic field B perpendicular to the 2DES. We can also observe the transition by varying the current I and find a relation Te~Ia between electron effective temperature Te and current. Here, a denotes the exponent for the power law. The exponent a, however, can have different values on the two sides of the transition point, which indicates different inelastic scattering mechanisms in the low-field insulator and in the quantum Hall conductor.
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Enhanced Phase Relaxation in a Hybrid Ferromagnet/Semiconductor System
Kuang Yao Chen,Chun-Kai Yang,N. Aoki,Y. Ochiai,Y. Ujiie,K. A. Cheng,Li-Hung Lin,C. F. Huang,Yu-Ru Li,Yen Shung Tseng,Po-Tsun Lin,Jau-Yang Wu,Sheng-Di Lin,C.-T. Liang 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems. Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems.
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