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김능진,배진한,홍성표 충남대학교 경상대학부설 경영경제연구소 1998 경영논집 Vol.14 No.1
1990년대 이후 정부가 주도하고 있는 정보통신분야 국책연구개발사업은 기술개발효과와 아울러 기술인력양성효과를 발생시키고 있는 것으로 판단된다. 본 연구는 인적자본이론에 기초하여 정보통신 국책연구개발사업의 기술인력 양성효과의 경제적 가치를 측정하였다. 총 21개 과제에 대해 측정을 시도한 결과 국책연구개발사업으로 축적된 인적자본은 6,204백만원 ∼ 14,322백만원으로 추정되었다. 이와 같은 막대한 규모의 인적자본 축적규모에 비추어볼 때 향후 국책연구개발사업의 연구성과를 추정함에 있어 기술인력양성효과가 필수적으로 고려되어야 함을 알 수 있다.
SiO$_2$/Si$_3$N$_4$ 이중 박막의 C-V 특성
Hong, Nung-Pyo,Hong, Jin-Woong The Korean Institute of Electrical Engineers 2003 전기학회논문지C Vol.52 No.10
The double layers of $SiO_2$/$Si_3$$N_4$ have superior charge storage stability than a single layer of $SiO_2$. Many researchers are very interested in the charge storage mechanism of $SiO_2$/$Si_3$$N_4$ [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of $Si_4$$N_4$ have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of $SiO_2$/$Si_4$$N_4$ by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.vaco, Inc.
Electrical Characteristics of Thin SiO$_2$Layer
Hong, Nung-Pyo,Hong, Jin-Woong The Korean Institute of Electrical Engineers 2003 KIEE International Transactions on Electrophysics Vol.3C No.2
This paper examines the electrical characteristic of single oxide layer due to various diffusion conditions, substrate orientations, substrate resistivity and gas atmosphere in a diffusion furnace. The oxide quality was examined through the capacitance-voltage characteristic due to the annealing time after oxidation process, and the capacitance-voltage characteristics of the single oxide layer by will be described via semiconductor device simulation.
이수원,홍진웅,홍능표 한국산업안전학회 2000 한국안전학회지 Vol.15 No.1
Recently, more advanced electronic elements become, they consume powerful and radiate more heat in devices. So the most suitable packaging technique is keenly needed. The most important purpose of packaging is to protect devices within a system for a long time and to prevent life of devices from external environments; floating ions such as humidity or sodium, and exposure from ultraviolet rays. In order to study the electrical properties of silicone gels often used as packing material due to the curing condition, volume resistivity and AC breakdown experiment are performed. Specimens are made up at several cured times and temperatures condition ; 0.5 [H], 1 [H] and 2[H] at 100[℃], 125[℃], 150[℃], 160[℃], 170[℃] and 180[℃]. It is confirmed that from volume resistivity experiment liquid silicone become get state at 90∼100[℃] and cured specimen for 1∼2[H] at 170[℃] are superior in electrical properties.