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- 저자 : Mutharasu (검색결과 4 건)
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Properties of Ag Layered in Te/Cd Stack Prepared by Stacked Elemental Layer Method
Shanmugan Subramani,Mutharasu Devarajan,Kamarulazizi Ibrahim 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.3
Ag layered Te/Cd stack thin films (<1 μm thick) were prepared by the Stacked Elemental Layer (SEL) method. The XRD results revealed that the synthesized films had a polycrystalline nature. The synthesized films were preferentially oriented with (111) directions with a cubic phase. Structural studies were evidenced the formation of Ag related alloys at high annealing temperatures as a result of thermal diffusion in elemental stack. Optical and photo-resistivity studies revealed the influence of Ag on the CdTe lattice at high annealing temperatures. Surface morphology and the influence of Ag atoms on surface roughness are also presented.
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Bounds for domination parameters in circulant graphs
T. Tamizh Chelvam,Sivagnanam Mutharasu 장전수학회 2012 Advanced Studies in Contemporary Mathematics Vol.22 No.4
A circulant graph is a Cayley graph constructed out of a finite cyclic group Γ and a generating set A of Γ. Sharp upper bounds are obtained for the dom-ination number, the total domination number and the connected domination number of circulant graphs and exact values for some of the parameters are determined in certain cases. Further, efficient dominating sets of some classes of circulant graphs are also obtained.
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Surface and electrical properties of rhombohedral In2O3 thin films prepared by an O2 plasma process
S. Shanmugan,D. Mutharasu 한양대학교 세라믹연구소 2011 Journal of Ceramic Processing Research Vol.12 No.5
Rhombohedral In2O3 (rh-In2O3) thin films were synthesized by O2 plasma processed indium thin films prepared by RF sputtering. The as-prepared and processed thin films were characterized to know the influence of the plasma power, O2 gas flow rate and also process time on the surface morphology and electrical properties. SEM images showed the film quality as uniform, well adherent and completely free of pin-holes and creaks. All processed films showed indium clusters as islands over the surface. The resistivity of the as-prepared films was drastically decreased by the O2 plasma process. Plasma power and O2 flow rate influenced the change in resistivity of the rh-In2O3 thin films. I-V characteristics showed the conductivity behavior of rh-In2O3 thin film for various process conditions. The observed particle size of rh-In2O3 lie in between 75 and 105 nm and were confirmed by AFM analysis. A noticeable change in surface roughness was also confirmed with respect to plasma process conditions using AFM images.
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Sputtering Deposition of Aluminium Molybdenum Alloy Thin Film Anodes for Thin Film Microbatteries
Balaji Sivaramakrishnan,Mani Chandran Thirumoolam,Mutharasu Devarajan 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.3
Al5Mo thin film anodes for Li-ion batteries were prepared using DC sputtering under different conditions, the latter being specified as deposition at room temperature (S0), deposition at 300°C (S1), and deposition at room temperature followed by thermal annealing at 300°C (S2). The thin films were deposited using an aluminum target tiled with molybdenum discs at a ratio calculated based on the theoretical sputtering yields. The structural and compositional analyses performed with x-ray diffraction (XRD) and energy-dispersive x-ray spectroscopy (EDX) confirmed the Al5Mo compound formation and the Al/Mo elemental ratio, respectively. The compound formation was observed to be evident only for the thin films subjected to heat treatment during or after deposition. Scanning electron micrographs reveal a higher porosity of approximately 23% for sample S0 and a lower porosity of around 18% for sample S1. The chronopotentiometry results show a higher volumetric specific capacity of approximately 197 mAh/cm3 for sample S1. Capacity increments have been observed for all samples upon charge-discharge cycles, whose values after 25 cycles for samples S0, S1, and S2 were 41.2%, 20.4%, and 21.1%, respectively.
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